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    FLC307XP Search Results

    FLC307XP Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLC307XP Eudyna Devices TRANS JFET 15V Original PDF
    FLC307XP Fujitsu FET, P Channel, ID 1.8 A Original PDF
    FLC307XP-EFLC307XP-E1 Fujitsu FET: P Channel: ID 1.8 A Original PDF

    FLC307XP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GaAs FET HEMT Chips

    Abstract: FLC307XP C-Band Power GaAs FET HEMT Chips
    Text: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Drain Gate Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for


    Original     		PDF FLC307XP FLC307XP Conditi4888 GaAs FET HEMT Chips C-Band Power GaAs FET HEMT Chips

    fujitsu gaas fet

    Abstract: FLC307XP C-Band Power GaAs FET HEMT Chips
    Text: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate Drain Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for


    Original     		PDF FLC307XP FLC307XP FCSI0598M200 fujitsu gaas fet C-Band Power GaAs FET HEMT Chips

    FLC30

    Abstract: fujitsu hemt FLC307XP
    Text: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Drain Gate Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for


    Original     		PDF FLC307XP FLC307XP Conditi4888 FLC30 fujitsu hemt

    C-Band Power GaAs FET HEMT Chips

    Abstract: fujitsu gaas fet GaAs FET HEMT Chips fujitsu hemt
    Text: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: hadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate Drain Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for


    Original     		PDF FLC307XP FLC307XP FCSI0598M200 C-Band Power GaAs FET HEMT Chips fujitsu gaas fet GaAs FET HEMT Chips fujitsu hemt

    FLC30

    Abstract: FLC307XP fujitsu gaas fet fujitsu hemt
    Text: FLC307XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r]add = 37%(Typ.) Proven Reliability DESCRIPTION


    OCR Scan     		PDF FLC307XP FLC307XP FCSI0598M200 FLC30 fujitsu gaas fet fujitsu hemt

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet