Untitled
Abstract: No abstract text available
Text: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current
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SIS0005Â
Q67041-S4028
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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Untitled
Abstract: No abstract text available
Text: Û 2 35 hü 5 QüfilbOl T7fi S IE M E N S PROFET BTS410H2 Smart Highside Power Switch Features • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump Fast demagnetization of inductive loads
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BTS410H2
flS35bDS
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neosid v6
Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
Text: FS: 04/93 Pag« 2 SIEMENS AG IC-SPECIFICATION TUA 4300 G Table of Contents ONE CHIP CAR RADIO Differences to the last edition Page 1 Table of Contents Page 2 Functional Description, Application Page 3 . 4 Circuit Description Page 5 . 6 Block Diagram Page
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10kHz
13kHz
2x10kHz-19kHz
3x13kHz-38kHz
57kHz
V66047-S695-G100-G1
fl235b05
D137bbfl
neosid v6
OV56
AM2 Siemens
neosid v7
V55D
neosid CAP
neosid 3.3
NEOSID
nr. 9181
Diode LT 330D
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1 M X 36-Bit Dynamic RAM Module 2 M X 18-Bit Dynamic RAM Module HYM 361110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)
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36-Bit
18-Bit
361110/20S-60/-70/-80
18-bit)
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726L1
Abstract: No abstract text available
Text: • fi23SbOS □□61715 >443 ■ SIEMENS PROFET BTS726L1 Smart Two Channel Highside Power Switch Product Summary Features • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection including load dump
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fi23SbOS
BTS726L1
P-DSO-20-9
Q67060-57003-A2
726L1
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Diode BA 596 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications. • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 596 white P Q62702-A954
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Q62702-A954
OD-323
EHA07001
G0bb577
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siemens S5 ST 50
Abstract: 80C515 SAB 8051 p cpu 222 siemens adc with 8051 microcontroler free sample 80C517 80C535 8oC51 a to d converter interface with 8051 mcp01
Text: SIEM EN S SAB 80C515A/83C515A-5 H igh-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 83C515A-5 SAB 80C515A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C515A/83C515A-5, up to 18 MHz operation frequency
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80C515A/83C515A-5
83C515A-5
80C515A
80C515A/83C515A-5,
80C51
666ns
16-bit
siemens S5 ST 50
80C515
SAB 8051 p
cpu 222 siemens
adc with 8051 microcontroler free sample
80C517
80C535
8oC51
a to d converter interface with 8051
mcp01
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
Q62702-F1314
OT-23
Junctio30
Q122DÃ
BFR181
IS21I2
E35bD5
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RXTNB 2
Abstract: No abstract text available
Text: PXB 4220 SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w .7 Features. 9
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6235b05
RXTNB 2
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WM 53B
Abstract: No abstract text available
Text: SIEM ENS PNP Silicon AF Transistors • • • • BC 636 . BC 640 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 635, BC 637, BC 639 NPN Type Marking BC 636 BC 638 BC 640 Ordering Code Q68000-A3365
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Q68000-A3365
Q68000-A3366
Q68000-A3367
EHP00204
EHP00202
EHP00205
flS35bDS
01EDSM2
fl235b05
D1205M3
WM 53B
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Untitled
Abstract: No abstract text available
Text: 3 I C I V I C n i3 Memory Sync Controller III SDA 9220-5 Preliminary Data MOS 1C Features • • • • • • Large area flicker elimination through field doubling Additional elimination of interline flicker in field mode Field switching and selection in field mode
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Q67100-H5087
P-LCC-44-1
fl235b05
fl23Sfc
A235b05
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Tf250C
Abstract: 10FCRL BTS917 GPT05165 GPT059D4 Q67060-S6700-A2 Q67060-S6700-A3 Q67060-S6700-A4 smd 4n
Text: SIEMENS HITFET BTS 917 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage • Input Protection ESD On-state resistance • Thermal Shutdown Current limit • Overload protection • Short circuit protection 60
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6535b05
Tf250C
10FCRL
BTS917
GPT05165
GPT059D4
Q67060-S6700-A2
Q67060-S6700-A3
Q67060-S6700-A4
smd 4n
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