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    FMM5709 Search Results

    FMM5709 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FMM5709VZ Eudyna Devices K/ Ka Band Low Noise Amplifier Mmic Original PDF
    FMM5709VZ Fujitsu RF Amplifier, General purpose amplifier, Single channel, Chip, 32000 MHz, VZ, 6-Pin Original PDF
    FMM5709X Unknown K/Ka Band Low Noise Amplifier MMIC Original PDF

    FMM5709 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FMM5709X

    Abstract: ka band lna FMM5709 ED-4701 ka band mmic ka band lna satellite
    Text: FMM5709X K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 2.5dB Typ. @ f=30GHz ・High Associated Gain : Gas = 23dB ( Typ.) @f=30GHz ・Broad Band : 17.5 ~ 32GHz ・High Output Power : P1dB = 12.5dBm ( Typ. ) @f=30GHz ・Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FMM5709X 30GHz 32GHz FMM5709X RECOMMEN504888 ka band lna FMM5709 ED-4701 ka band mmic ka band lna satellite

    FMM5709VZ

    Abstract: ED-4701 RO4003 ka band lna
    Text: FMM5709VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=26GHz ・High Associated Gain : Gas = 21dB ( Typ.) @f=26GHz ・Broad Band : 17.5~32GHz ・High Output Power : P1dB = 12dBm ( Typ. ) @f=26GHz ・Ball Grid Array SMT Package(VZ-pkg)


    Original     		PDF FMM5709VZ 26GHz 32GHz 12dBm FMM5709VZ ED-4701 RO4003 ka band lna

    ro4003

    Abstract: ka band lna
    Text: FMM5709VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=26GHz ・High Associated Gain : Gas = 21dB (Typ.) @f=26GHz ・Broad Band : 17.5~32GHz ・High Output Power : P1dB = 12dBm (Typ.) @f=26GHz ・Ball Grid Array SMT Package (VZ)


    Original     		PDF FMM5709VZ 26GHz 32GHz 12dBm FMM5709VZ ro4003 ka band lna

    YC 27000

    Abstract: yc 428 transistor ED-4701 RO4003 FMM5709YC FMM5709
    Text: ES/FMM5709YC K-Band Low-Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=30GHz ・High Associated Gain : Gas = 21dB ( Typ.) @f=30GHz ・Broad Band : 17.5~30GHz ・High Output Power : P1dB = 12｡5dBm ( Typ. ) @f=30GHz ・Laminate SMT Package(YC-pkg)


    Original     		PDF ES/FMM5709YC 30GHz 125dBm FMM5709YC YC 27000 yc 428 transistor ED-4701 RO4003 FMM5709

    ka band lna

    Abstract: FMM5709 FMM5709VZ ED-4701 RO4003 ka band mmic 26GHz LNA
    Text: FMM5709VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=26GHz ・High Associated Gain : Gas = 21dB (Typ.) @f=26GHz ・Broad Band : 17.5~32GHz ・High Output Power : P1dB = 12dBm (Typ.) @f=26GHz ・Ball Grid Array SMT Package (VZ)


    Original     		PDF FMM5709VZ 26GHz 32GHz 12dBm FMM5709VZ ka band lna FMM5709 ED-4701 RO4003 ka band mmic 26GHz LNA

    Untitled

    Abstract: No abstract text available
    Text: FMM5709X K / Ka Band Low Noise Amplifier MMIC FEATURES Low Noise Figure : NF = 2.5dB Typ. @ f=30GHz High Associated Gain : Gas = 23dB ( Typ.) @f=30GHz Broad Band : 17.5 ~ 32GHz High Output Power : P1dB = 12.5dBm ( Typ. ) @f=30GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FMM5709X 30GHz 32GHz FMM5709X