G2GS
Abstract: 615t FMQ-G1FS
Text: I F AV (A) Part Number 50Hz IR (µA) Tstg (°C) VF (V) max IF (A) IR (H) (mA) VR = VRM VR = VRM max max t rr Ta (°C) 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I R (=2 I F) 75% Recovery Point (ex. I F / I R =100mA/200mA 75% Recovery Point)
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100mA/100mA
100mA/200mA
G2GS
615t
FMQ-G1FS
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FMPG2F
Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Text: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179
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RBV-60
RBV-40
FMPG2F
marking RBV - 401
3f series surface mount transistor
FMXA-2202S
RBV-406M
SJPM-H4
FMV-3HU DIODE
diode eu02
rectifier rbv-606
marking RBV
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PDF
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fmqg5g
Abstract: FMQG5F FMRG5H fmqg2fs fmqg2f
Text: I F AV (A) Part Number 50Hz IR (µA) Tstg (°C) VF (V) max IF (A) IR (H) (mA) VR = VRM VR = VRM max max t rr Ta (°C) 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I R (=2 I F) 75% Recovery Point (ex. I F / I R =100mA/200mA 75% Recovery Point)
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100mA/100mA
100mA/200mA
UL94V-0
fmqg5g
FMQG5F
FMRG5H
fmqg2fs
fmqg2f
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PDF
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FMUG16
Abstract: FMQG5FM fmqg2f fmqg5g
Text: 4-2 Fast Recovery Diodes VRM V 600 800 1000 1300 1500 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)
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O-220F2Pin
O-220F
FMUG16
FMQG5FM
fmqg2f
fmqg5g
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PDF
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ru 52 8 pin
Abstract: diodes ru 4c fmqg5g
Text: Fast Recovery Rectifier Diodes 4-2 4-2-1 Part No. 1 Chip VRM IF IFSM trrq trrw V (A) (A) (µS) (µS) Package Fig. No. Part No. EU 2YX 1.2 25 0.2 0.08 Axial(E1) 3 RS 1A RU 2YX 1.5 30 0.2 0.08 Axial(R1) 4 AU02A RU 3YX 2.0 50 0.2 0.08 Axial(R2) 5 EU02A 70 0.4
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EU01Z
AU01Z
AS01Z
ES01Z
AU02Z
EU02Z
EU01A
AU01A
AS01A
ES01A
ru 52 8 pin
diodes ru 4c
fmqg5g
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PDF
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G2GS
Abstract: FMQ-G1FS
Text: I F AV (A) Part Number 50Hz IR (µA) Tstg (°C) VF (V) max IF (A) IR (H) (mA) VR = VRM VR = VRM max max t rr Ta (°C) 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I R (=2 I F) 75% Recovery Point (ex. I F / I R =100mA/200mA 75% Recovery Point)
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100mA/100mA
100mA/200mA
G2GS
FMQ-G1FS
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PDF
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FMQ-G1FS
Abstract: ES01F FMQ-G5FMS
Text: –40 to +150 1.0 1.0 10 500 100 4 100/200 12 0.6 –40 to +150 1.8 1.5 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 RU 4DS 1.5 2.5 50 –40 to +150 1.8 3.0 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 ES01F 0.5 20 –40 to +150 2.0 0.5 10 200 100 1.5 10/10
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100mA/100mA
100mA/200mA
FMQ-G1FS
ES01F
FMQ-G5FMS
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PDF
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diode 8603
Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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VR-60SS
VR-61SS
diode 8603
SOT23 1Z
FMV-3HU
RM2C
RN4Z
General FBT
UX-F5B
3gu diode
diode RBV-406M
Part marking
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PDF
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FMP-G2FS
Abstract: FMPG2F fmqg1f
Text: VRM V I F (AV) (A) Part Number 50Hz VR = VRM VR = VRM max max t rr Ta (°C) t rr 1 (µs) IF / I FP (mA) 2 (µs) IF / I FP (mA) 1.0 10 0.5 100 4.0 10/10 1.3 100/200 12 0.6 RH 10F 0.8 60 –40 to +150 1.0 1.0 10 0.5 100 4.0 10/10 1.3 100/200 15 0.44 RH 2F
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100mA/100mA
100mA/200mA
FMP-G2FS
FMPG2F
fmqg1f
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PDF
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FMQG5GS
Abstract: No abstract text available
Text: VRM V I F (AV) (A) Part Number 50Hz VR = VRM VR = VRM max max t rr Ta (°C) t rr 1 (µs) IF / I FP (mA) 2 (µs) IF / I FP (mA) 1.0 10 0.5 100 4.0 10/10 1.3 100/200 12 0.6 RH 10F 0.8 60 –40 to +150 1.0 1.0 10 0.5 100 4.0 10/10 1.3 100/200 15 0.44 RH 2F
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100mA/100mA
100mA/200mA
FMQG5GS
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PDF
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Untitled
Abstract: No abstract text available
Text: 4-2 Fast Recovery Diodes VRM V 600 800 1000 1300 1500 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)
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O-220F2Pin
O-220F
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PDF
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FMQG5GS
Abstract: No abstract text available
Text: 4-2 Fast Recovery Diodes VRM V 600 800 1000 1300 1500 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)
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O-220F2Pin
O-220F
FMQG5GS
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PDF
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fn651
Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Text: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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2SA744
2SA745
2SA746
2SA747
2SA764
2SA765
2SA768
2SA769
2SA770
2SA771
fn651
CTB-34D
2SC5586
hvr-1x7
STR20012
sap17n
2sd2619
RBV-4156B
SLA4037
2sk1343
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PDF
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B 2306 BARRIER RECTIFIER
Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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VR-60SS
VR-61SS
B 2306 BARRIER RECTIFIER
diode RU 3B
FMQ2FU
RBV-406
UX-F5B
w 2206 schottky
fmv -30j
EZ0150
fmu 22 u
FMP-3FU
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PDF
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Untitled
Abstract: No abstract text available
Text: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)
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AG01A
AG01Y
AG01Z
FMB-29
FMB-29L
FMB-32
EL02Z
SFPB-66
SFPB-69
SFPB-72
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PDF
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UX-F5B
Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Text: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100
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O-220F
RZ1030
RZ1040
RZ1055
RZ1065
RZ1100
RZ1125
RZ1150
UX-F5B
UX-F5B diode
RG-2A Diode
shv-30j
FMQ2FU
axial package
fmp2fur
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PDF
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SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
SE012
SE090
SE140N
SE115N
diode
2SC5487
sta474a
8050e
SE110N
SLA-7611
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PDF
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FMPG2F
Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Text: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in
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D01ED0
SFPJ-63
VR-60SS
SFPJ-73
VR-61SS
SFPL-52
SFPL-62
SFPM-52
FMPG2F
zener diode reference guide
diode MARKING 30J
MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR
diode hvr 1x
FMB-34M
sot23 3F mark
fmlg12
RBV SOT23
marking code RBV SOT23
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PDF
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FMQG5FM
Abstract: FMQ-G1FS FMUG2F fmqg5g fmqg2f ES01F EU02 fmqg5f FMPG5H FMQ-G5FM
Text: –40 to +150 1.0 1.0 10 500 100 4 100/200 12 0.6 –40 to +150 1.8 1.5 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 RU 4DS 1.5 2.5 50 –40 to +150 1.8 3.0 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 ES01F 0.5 20 –40 to +150 2.0 0.5 10 200 100 1.5 10/10
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100mA/100mA
100mA/200mA
FMQG5FM
FMQ-G1FS
FMUG2F
fmqg5g
fmqg2f
ES01F
EU02
fmqg5f
FMPG5H
FMQ-G5FM
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PDF
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FMQ-G1FS
Abstract: FMP G2FS G2GS RU4DS
Text: I F AV (A) Part Number 50Hz IR (µA) Tstg (°C) VF (V) max IF (A) IR (H) (mA) VR = VRM VR = VRM max max t rr Ta (°C) 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I R (=2 I F) 75% Recovery Point (ex. I F / I R =100mA/200mA 75% Recovery Point)
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100mA/100mA
100mA/200mA
FMQ-G1FS
FMP G2FS
G2GS
RU4DS
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PDF
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FMPG2F
Abstract: FMQ-G1FS FMP-G2FS FMP G2FS G5FS AS01 ES01 ES01A ES01F ES01Z
Text: –40 to +150 1.0 1.0 10 500 100 4 100/200 12 0.6 RU 4D 50 –40 to +150 1.8 1.5 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 RU 4DS 1.5 2.5 50 –40 to +150 1.8 3.0 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 ES01F 0.5 20 –40 to +150 2.0 0.5 10 200 100 1.5
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100mA/100mA
100mA/200mA
ES01Z
ES01A
ES01F
FMPG2F
FMQ-G1FS
FMP-G2FS
FMP G2FS
G5FS
AS01
ES01
ES01A
ES01F
ES01Z
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PDF
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SD MOSFET DRIVE DATASHEET 4468 8 PIN
Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Text: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720
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O03CC0
Room3202,
H1-O03CC0-1008031NM
SD MOSFET DRIVE DATASHEET 4468 8 PIN
SK 18752
ctx12s
fgt313
18752 SANKEN
sla6805m
fn651
sla6101
SK 18751
str20012
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PDF
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Untitled
Abstract: No abstract text available
Text: 4-2 Fast Recovery Diodes VRM V 600 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA)
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AU01A
AS01A
ES01A
AU02A
EU02A
FMU-G16S
FMU-16S,
FMU-26S,
FMU-G26S
ES01F
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PDF
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FMUG16
Abstract: RY3A
Text: 4-2 Fast Recovery Diodes VRM V 600 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM Tj (A) (°C) 50Hz Single Half Sine Wave Tstg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA)
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AU01A
AS01A
ES01A
AU02A
EU02A
FMY-1036S
FMU-G16S
FMU-16S,
FMU-26S,
FMU-G26S
FMUG16
RY3A
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PDF
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