Untitled
Abstract: No abstract text available
Text: {Product*, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF839F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The MRF839F is Designed for Class AB, Common Emitter
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MRF839F
MRF839F
040x45'
100pA
100mA
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IRG4BC10KD
Abstract: No abstract text available
Text: PD -91 73 4A International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d fo r m otor control, tsC = 1 0 js, @ 3 6 0 V V CE (start , T j = 125°C,
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IRG4BC10KD
IRG4BC10KD
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E 7805 8pin ic
Abstract: MAX691 MAX690 MAX690CPA MAX691CPE 7805 regulator pin diagram
Text: / k l/ J X I / k l Microprocessor Supervisory Circuits The MAX690, MAX692 and MAX694 are supplied in 8-pin packages and provide four functions: 1 A Reset output during power-up, power-down and brownout conditions.
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MAX690
MAX690,
MAX692
MAX694
E 7805 8pin ic
MAX691
MAX690CPA
MAX691CPE
7805 regulator pin diagram
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PDF
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03N06C
Abstract: 03N06CLE MC 140 transistor
Text: ili HARRIS RLD03N06CLE, uu s e m ic o n d u c to r RLD03N06CLESM, RLP03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC TO-220AB • 0.30A , 60V •
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RLD03N06CLE,
RLD03N06CLESM,
RLP03N06CLE
O-220AB
03N06CLE,
RLD03N06CLESM
RLP03N06CLE
13e-8)
80e-3
95e-3
03N06C
03N06CLE
MC 140 transistor
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transistor LT 5210
Abstract: c184* transistor c1837 transistor C1849R LT 5210 c1843 c1840 C1835 33L25 C1847
Text: EO HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECÍHDmCS 1 I - • MCT5210 MCT5211 DESCRIPTION PACKAGE DIMENSIONS The MCT-521X are high perform ance CMOS/LSTTL logic com patible pholotransistor type optically coupled isolator products. They are constructed using a very low
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MCT5210
MCT5211
MCT-521X
MCT-5211
transistor LT 5210
c184* transistor
c1837 transistor
C1849R
LT 5210
c1843
c1840
C1835
33L25
C1847
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PDF
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C1847
Abstract: No abstract text available
Text: I HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 I I MCT5210 MCT5211 PACKAGE DIMENSIONS DESCRIPTION The MCT-521X are high performance CMOS/LSTTL logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low
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MCT5210
MCT5211
MCT-521X
MCT-5211
C1850
C1852
74LiLifl51
C1847
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PDF
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Untitled
Abstract: No abstract text available
Text: •43D5E71 Q054?flfl ■ HAS RFP17N06L H a r r is A u g u s t 19 91 N-Channel Logic Level Enhancem ent-Mode Power Field-Effect Transistor Package Features T O - 220AB • 17A, 60 V TOP VIEW • r D S 0 N = 0 .1 o o n DRAIN (FLANGE) • Design O ptim ized for 5 V G ate Drives
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43D5E71
RFP17N06L
220AB
29MgC
FPf7N06lCT7
CAPfiFP17N06tCFt
GFSHFP17N06LCF6
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lp1n08
Abstract: N-Channel Enhancement-Mode Power Field-Effect transistor
Text: S h a r r is January 1 9 9 4 R L P 1 N 0 8 L E Current Limited ESD Protected N-Channel Enhancement-Mode Power Field-Effect Transistor F e a tu re s Package • 1A, 80V T O -2 2 0 A B TOP VIEW • rDS ON = 0.75H • iLIM ITa* + 1 5 0 ° C . 1.5A Max
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5E-10
32E-10
lp1n08
N-Channel Enhancement-Mode Power Field-Effect transistor
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PDF
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AT-60510
Abstract: S parameters of 5.8 GHz transistor
Text: W Ap% AT-60510 Up to 6 GHz Low Noise Silicon Bipolar Transistor HEWLETT wL'f!ÆPA CK A R D Features • • • • • 100 mil Package Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz
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AT-60510
S parameters of 5.8 GHz transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V b 8.5 A ^DS on Package Ordering Code 0.8 Í2 TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1342-A2
fi235b05
A23Sb05
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NE42484C
Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE42484C
NE42484C
42484C
E42484C-SL
NE42484C-T1
transistor NEC D 586
NEC Ga FET marking L
NE42484C-T1
28609
low noise FET NEC U
ne42484
nec gaas fet marking
NEC 2533
NEC Ga FET
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Untitled
Abstract: No abstract text available
Text: Product Description SXA-289 Stanford M icrodevices’ SXA-289 am plifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. These HBT am plifiers are fabricated using m olecular beam epitaxial growth technology which produces
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SXA-289
SXA-289
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TCHT1130
Abstract: Ex-90C
Text: J TELEFUNKEN ELECTRONIC 4ME D HH fi^GO^ti 001117= T E i ALG6 Optocouplers ' T ' H I - $ "J? Standard Opto Isolators w ith Transistor Output Package Type C haracteristics UL-recognized: CTR File No. E 76414 Dimensions see page 56 - _ i j bW 1T T m N ; liJ
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TCHT1130
0806/IE
601-0860/IEC
TCHT1130
Ex-90C
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PDF
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" transistor" fgs 3
Abstract: Fly DS 100
Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 b 8.5 A W>s 600 V ^bs on 0.8 n Package Ordering Code TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1342-A2
" transistor" fgs 3
Fly DS 100
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ATF-35576
Abstract: SU 179 1S21
Text: HEWLETT-PACKARD/ CMPNTS blE I> Wam H E W L E T T llLm7Sfll4 □□□tiei4ô 0T3 H H P A ATF-35576 2-18 GHz Low Noise Pseudomorphic HEMT PACKARD w LU M • Features 76 Package • PHEMT Technology • High Gain at Moderate Noise Figure: G = 12 dB Typ, NF = 2.0 dB Max @ 12 GHz
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ATF-35576
SU 179
1S21
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Untitled
Abstract: No abstract text available
Text: AVANTEK Q INC 2D E avantek D im n b fc 00Dti4b3 1 AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor T r ' £ i - ‘Z . l Avantek 100 mil Package Features • Low Noise Figure: 1.6 d B typical at 2.0 GHz 3.0 d B typical at 4.0 GHz • High Associated Galn:14.0 dB typical at 2.0 GH z
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00Dti4b3
AT-41410
AT-41410
band42
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Untitled
Abstract: No abstract text available
Text: AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor Who IHEWLETT mL'nM P a c k a r d Features • • • • 100 m il Package Low Noise Figure: 1.6 dB typ ica l at 2.0 GHz 3.0 dB typ ica l at 4.0 GHz High A ssociated Gain: 14.0 dB typ ica l at 2.0 GHz
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AT-41410
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avantek
Abstract: Avantek amplifier AT-41410 T-31-21 Avantek, Inc ic and 4081 AVANTEK oscillator
Text: AVANTEK Q INC imntt ooobMb3 i 2GE D avantek AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor Z .\ Features • • • • Avantek 100 mil Package Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Galn:14.0 dB typical at 2.0 GHz
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AT-41410
AT-41410
avantek
Avantek amplifier
T-31-21
Avantek, Inc
ic and 4081
AVANTEK oscillator
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PDF
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avantek
Abstract: Avantek, Inc AT-42010 T-31-21 AVANTEK oscillator
Text: EOE D A V A N T E K INC Q • GGQhMfih T AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor- avan tek ' - Avantek 100 mil Package Features • High Output Power: 12.0 dBm typical Pi ¿b at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:
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AT-42010
AT-42010
avantek
Avantek, Inc
T-31-21
AVANTEK oscillator
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PDF
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BFT92
Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures
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BFT92W
OT323
BFT92W
BFT92.
OT323.
711002b
BFT92
"MARKING CODE W1*"
GHz PNP transistor
marking G SOT323 Transistor
SOT323 Marking 87
SOT323 WM
marking L2 SOT23 6
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PDF
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TC-2509
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2138, 2SK2138-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP T IO N The 2SK2138, 2SK2138-Z is N-channei Power MOS Field Effect PACKAGE DIMENSIONS in m illim e te rs} Tra n sisto r designed fo r high voltage sw itch in g applications.
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2SK2138,
2SK2138-Z
2SK2138-Z
TC-2509
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PDF
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ATF-13484
Abstract: ATF13484-STR
Text: ATF-13484 1-16 GHz Low Noise Gallium Arsenide FET What H EW LETT mlXM PA C K A R D 84 Plastic Package Features • • • • • Low Noise Figure: 1.0 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB
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ATF-13484
ATF13484-STR
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PDF
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Untitled
Abstract: No abstract text available
Text: Central CMXT2207 Semiconductor Corp. SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur face mount package, designed for small signal
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CMXT2207
OT-26
150itiA,
15rnA
15OmA,
OT-26
06-January
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NE334501
Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.
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NE334S01
NE334S01
NE334501
transistor k 2761
NEC D 822 P
NEC Ga FET marking C
nec gaas fet marking
NEC Ga FET marking A
ap 2761 l transistor
low noise FET NEC U
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