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    FORVARD VOLTAGE 0.2 V Search Results

    FORVARD VOLTAGE 0.2 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    FORVARD VOLTAGE 0.2 V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TLR4093A

    Abstract: TLR4243 TLK4093A TLR40 TLR2098A TLR4093
    Text: TO SHIBA {D IS C R E T E /O P T O } 9097250 TO S H IB A TT D IS C R E T E /O P T O j > ì f | T E H 725Q 99D 17250 0D 175S0 b D T -4 I-3 3 TLR2098A, TLR4093A TLR2248, TLR4243 RED COLOR 4 DIGITS LED DISPLAY • For Duplex drive connection« and available both polarity coamon anode or c o a o a


    OCR Scan     		175S0 TLR2098A, TLR4093A TLR2248, TLR4243 TLR4243 TLK4093A TLR40 TLR2098A TLR4093 PDF

    str f 6467

    Abstract: STR 6467 2SK191 9vtfr 2SK1917-MR T151
    Text: 2SK1917-MR FUJI POWER MOS-FET N-CMANIMEL SILICON POWER MOS-FET F -II SERIES • Features ■ Outline Drawings • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • VGS—+ 30V Guarantee ■ Applications


    OCR Scan     		2SK1917-MR SC-67 IZHTS3033-t str f 6467 STR 6467 2SK191 9vtfr 2SK1917-MR T151 PDF

    2SK2806-01

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2806-01 SPEC. NO. Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED s § M ? iY 0257-fi-004a 1 1.Scope This specifies Fuji Power MOSFET 2SK2806-01


    OCR Scan     		2SK2806-01 0257-fi-004a To-220 0257-R-003a 0257-R-003a 2SK2806-01 PDF

    b175

    Abstract: 4h4 1 2SK2806-01 TL 003a
    Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2806-01 : SPEC. NO. Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE DRAWN' NAME APPROVED Fuji Electric Co.,Ltd. CHECKED I/. Y 0257-R-004a I_


    OCR Scan     		2SK2806-01 0257-fi-004a To-220 0257-R-003a 0257-R-003a b175 4h4 1 2SK2806-01 TL 003a PDF

    2sk 100a

    Abstract: HH1T 2SK1509 T151 A2221
    Text: 2SK1509 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I I Features S E R I E S Outline Drawings 1Hiç h current 1Low no-resistanoe No secondary breakdown 1Low driving power Hich forward Transconductance I Applications 1Me tor controllers Ge îaral purpose power amplifier


    OCR Scan     		2SK1509 O-22QAB SC-46 2sk 100a HH1T 2SK1509 T151 A2221 PDF