FP750SOT343
Abstract: MIL-HDBK-263
Text: PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 33 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS
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FP750SOT343
FP750SOT343
FP750
OT343
SC-70)
surface-mou63.
MIL-HDBK-263
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PDF
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FP750SOT343
Abstract: MIL-HDBK-263
Text: PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 38 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS
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Original
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FP750SOT343
FP750SOT343
FP750
OT343
SC-70)
surface-mou63.
MIL-HDBK-263
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PDF
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EB750SOT343BA
Abstract: FP750SOT343
Text: EB750SOT343BA FP750SOT343 1.85GHz LNA EVALUATION BOARD FEATURES • • • • • 19 dBm Output Power 17 dB Small Signal Gain 0.8 dB Noise Figure 37 dBm IP3 Bias 3.3V, 110mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB750SOT343BA
FP750SOT343
85GHz
110mA
FP750SOT343;
85GHz
EB750SOT343BA
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Untitled
Abstract: No abstract text available
Text: FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 38 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
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Original
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FP750SOT343
FP750SOT343
FP750
OT343
SC-70)
MIL-STD-1686
MIL-HDBK-263.
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PDF
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Untitled
Abstract: No abstract text available
Text: FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 35 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
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Original
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FP750SOT343
FP750SOT343
FP750
OT343
SC-70)
MIL-STD-1686
MIL-HDBK-263.
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PDF
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