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    FP750SOT343 Search Results

    FP750SOT343 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FP750SOT343 Filtronic PACKAGED LOW NOISE, MEDIUM POWER PHEMT Original PDF

    FP750SOT343 Datasheets Context Search

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    FP750SOT343

    Abstract: MIL-HDBK-263
    Text: PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 33 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS


    Original
    PDF FP750SOT343 FP750SOT343 FP750 OT343 SC-70) surface-mou63. MIL-HDBK-263

    FP750SOT343

    Abstract: MIL-HDBK-263
    Text: PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 38 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS


    Original
    PDF FP750SOT343 FP750SOT343 FP750 OT343 SC-70) surface-mou63. MIL-HDBK-263

    EB750SOT343BA

    Abstract: FP750SOT343
    Text: EB750SOT343BA FP750SOT343 1.85GHz LNA EVALUATION BOARD FEATURES • • • • • 19 dBm Output Power 17 dB Small Signal Gain 0.8 dB Noise Figure 37 dBm IP3 Bias 3.3V, 110mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original
    PDF EB750SOT343BA FP750SOT343 85GHz 110mA FP750SOT343; 85GHz EB750SOT343BA

    Untitled

    Abstract: No abstract text available
    Text: FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 38 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility


    Original
    PDF FP750SOT343 FP750SOT343 FP750 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263.

    Untitled

    Abstract: No abstract text available
    Text: FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 35 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility


    Original
    PDF FP750SOT343 FP750SOT343 FP750 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263.