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    SN74F109N Texas Instruments Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70 Visit Texas Instruments Buy
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    Rochester Electronics LLC FQA7N80C-F109

    POWER MOSFET, N-CHANNEL, QFET, 8
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    DigiKey FQA7N80C-F109 Bulk 13,973 179
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    onsemi FQA7N80C-F109

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    Quest Components FQA7N80C-F109 232
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    Rochester Electronics FQA7N80C-F109 13,973 1
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    Avnet Silica FQA7N80C-F109 143 Weeks 30
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    Fairchild Semiconductor Corporation FQA7N80C_F109

    Transistors
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    Vyrian FQA7N80C_F109 12,502
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    FQA7N80C_F109 Datasheets (2)

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    ECAD Model
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    FQA7N80C_F109 Fairchild Semiconductor 800V N-Channel MOSFET Original PDF
    FQA7N80C-F109 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 7A TO-3P Original PDF

    FQA7N80C_F109 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: QFET FQA7N80C_F109 800V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA7N80C PDF

    FQA7N80C_F109

    Abstract: F109 FQA7N80C
    Text: QFET FQA7N80C_F109 800V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA7N80C FQA7N80C_F109 F109 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQA7N80C_F109 N-Channel QFET MOSFET 800 V, 7 A, 1.9 Ω Features Description • 7.0 A, 800 V, RDS on = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		FQA7N80C PDF

    Untitled

    Abstract: No abstract text available
    Text: FQA7N80C_F109 N-Channel QFET MOSFET 800 V, 7 A, 1.9 Ω Features Description • 7.0 A, 800 V, RDS on = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar


    Original     		FQA7N80C PDF

    FQA7N80C

    Abstract: F109
    Text: QFET FQA7N80C 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA7N80C FQA7N80C F109 PDF

    MC0628R

    Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
    Text: Discontinued Product s 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB


    Original     		ST42091 F50188E NB5F009 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW MC0628R mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884 PDF

    MC0628R

    Abstract: 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE
    Text: R E L I A B L E . L O G I C . I N N O V A T I O N . Logic Cross-Reference Logic Cross-Reference 2003 Texas Instruments Printed in the U.S.A. by Texoma Business Forms, Durant, Oklahoma Printed on recycled paper. SCYB017A NEW First Revision Logic Cross-Reference


    Original     		SCYB017A T74ALVC32374 74CBTLV16211 SN74CBTD16211 SN74SSTV16859 SN74CBTLV16211GRDR SN74ALVC16245AGRDR -SN74SSTV16859GKER MC0628R 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE PDF