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    FQB44N10 Price and Stock

    onsemi FQB44N10TM

    MOSFET N-CH 100V 43.5A D2PAK
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    DigiKey FQB44N10TM Digi-Reel 562 1
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    FQB44N10TM Cut Tape 562 1
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    FQB44N10TM Reel 800
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    Avnet Americas FQB44N10TM Reel 22 Weeks 800
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    Mouser Electronics FQB44N10TM 1,427
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    Arrow Electronics FQB44N10TM Cut Strips 861 22 Weeks 1
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    Newark FQB44N10TM Cut Tape 1,195 1
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    FQB44N10TM Reel 800
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    Onlinecomponents.com FQB44N10TM
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    Bristol Electronics FQB44N10TM 17 3
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    Quest Components FQB44N10TM 13
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    Richardson RFPD FQB44N10TM 800
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    Avnet Asia FQB44N10TM 22 Weeks 1,600
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    Avnet Silica FQB44N10TM 23 Weeks 800
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    Chip1Stop FQB44N10TM Cut Tape 800
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    EBV Elektronik FQB44N10TM 24 Weeks 800
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    Aptina Imaging FQB44N10TM

    Trans MOSFET N-CH 100V 43.5A 3-Pin(2+Tab) D2PAK T/R
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    Verical FQB44N10TM 861 6
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    Fairchild Semiconductor Corporation FQB44N10TM

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    Bristol Electronics FQB44N10TM 66
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    Rochester Electronics FQB44N10TM 567 1
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    Win Source Electronics FQB44N10TM 3,700
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    FQB44N10 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQB44N10 Fairchild Semiconductor 100 V N-Channel MOSFET Original PDF
    FQB44N10TM Fairchild Semiconductor 100V N-Channel QFET Original PDF
    FQB44N10TM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 43.5A D2PAK Original PDF

    FQB44N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQB44N10 / FQI44N10 N-Channel QFET MOSFET 100 V, 43.5 A, 39 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB44N10 FQI44N10 FQI44N10

    Untitled

    Abstract: No abstract text available
    Text: FQB44N10 / FQI44N10 October 2008 QFET FQB44N10 / FQI44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB44N10 FQI44N10 FQI44N10

    FQB44N10

    Abstract: FQI44N10
    Text: FQB44N10 / FQI44N10 June 2000 QFET TM FQB44N10 / FQI44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB44N10 FQI44N10 FQI44N10

    Untitled

    Abstract: No abstract text available
    Text: FQB44N10 / FQI44N10 June 2000 QFET TM FQB44N10 / FQI44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB44N10 FQI44N10 FQB44N10TM O-263

    Untitled

    Abstract: No abstract text available
    Text: FQB44N10 N-Channel QFET MOSFET 100 V, 43.5 A, 39 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQB44N10

    Untitled

    Abstract: No abstract text available
    Text: FQB44N10 / FQI44N10 June 2000 QFET TM FQB44N10 / FQI44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB44N10 FQI44N10 FQI44N10 FQI44N10TU O-262

    FQB44N10

    Abstract: FQI44N10
    Text: FQB44N10 / FQI44N10 October 2008 QFET FQB44N10 / FQI44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB44N10 FQI44N10 FQI44N10

    AN9525

    Abstract: IRFI4212 rectifier honda bridge rectifier 2A CHOOSING MOSFETS mueta AN-003 Mosfet selection SI7852 STB16NF06 AN-9525
    Text: Application Note AN-002 Power MOSfet selection guidelines for class-D power amplifiers with ultra-low distortion. Selection of MOSfets using these guidelines can help the design of highly efficient full bridge class-D power amplifiers. This is achieved by carefully considering certain


    Original     		PDF AN-002 AN-003) 4261GA AN-9525 AN-1070 AN-1071 AN9525 IRFI4212 rectifier honda bridge rectifier 2A CHOOSING MOSFETS mueta AN-003 Mosfet selection SI7852 STB16NF06 AN-9525

    huf75

    Abstract: FQB46N15 FQB33N10 HUF76639 IRLW530 huf75939
    Text: Part VDS Number V TO-263 N-Channel FDB5690 HUF76423S3S FQB30N06L HUF76419S3S FQB30N06 FQB20N06L FQB20N06 FQB13N06L FQB13N06 HUF75545S3S HUF75542S3S FQB90N08 FQB70N08 FQB58N08 FQB44N08 FQB24N08 FQB17N08L FQB17N08 FQB9N08L FQB9N08 HUF75645S3S HUF76645S3S FQB70N10


    Original     		PDF O-263 FDB5690 HUF76423S3S FQB30N06L HUF76419S3S FQB30N06 FQB20N06L FQB20N06 FQB13N06L FQB13N06 huf75 FQB46N15 FQB33N10 HUF76639 IRLW530 huf75939

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    FQB27N25

    Abstract: FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L
    Text: Discrete MOSFET TO-263 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-263(D2PAK) N-Channel ISL9N302AS3ST 30 Single 0.0023 0.0033 - - 110 75 345 FDB8030L 30 Single 0.0035


    Original     		PDF O-263 O-263 ISL9N302AS3ST FDB8030L ISL9N303AS3ST FDB7045L ISL9N304AS3ST FDB6676 FDB6670AL 30VDS FQB27N25 FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08