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Abstract: No abstract text available
Text: FQD16N25C N-Channel QFET MOSFET 250 V, 16 A, 270 mΩ Features Description • 16 A, 250 V, RDS on = 270 mΩ (Max.) @ VGS = 10 V, ID = 8 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET
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FQD16N25C
FQD16N25C
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FAIRCHILD FQD DPAK
Abstract: FQD16N25C Power MOSFET, Fairchild Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Text: QFET FQD16N25C 250V N-Channel MOSFET tm Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD16N25C
FQD16N25C
FAIRCHILD FQD DPAK
Power MOSFET, Fairchild
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
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FQD16N25C
Abstract: FQD16N25CTF FQD16N25CTM
Text: QFET FQD16N25C 250V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD16N25C
FQD16N25C
FQD16N25CTF
FQD16N25CTM
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fairchild
Abstract: FQD16N25C FQD16N25CTF FQD16N25CTM A64A
Text: QFET FQD16N25C 250V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD16N25C
FQD16N25C
fairchild
FQD16N25CTF
FQD16N25CTM
A64A
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