Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FQD3N60CTF Search Results

    FQD3N60CTF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQD3N60CTF Fairchild Semiconductor 600V N-Channel MOSFET Original PDF

    FQD3N60CTF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQD3N60C / FQU3N60C N-Channel QFET MOSFET 600 V, 2.4 A, 3.4 Ω Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQD3N60C FQU3N60C FQU3N60C

    FQD3N60C

    Abstract: FQD3N60CTF FQD3N60CTM
    Text: TM QFET FQD3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3N60C FQD3N60C FQD3N60CTF FQD3N60CTM

    RG 2006 10A 600V

    Abstract: FQU3N60C FQU3N60CTU FQD3N60C FQD3N60CTF FQD3N60CTM
    Text: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD3N60C FQU3N60C FQU3N60C RG 2006 10A 600V FQU3N60CTU FQD3N60CTF FQD3N60CTM