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Untitled Abstract: No abstract text available Text: FQB33N10 / FQI33N10 April 2000 QFET TM FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQB33N10 FQI33N10 FQI33N10TU O-262 FQI33N10	PDF

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Abstract: No abstract text available
Text: FQB33N10 / FQI33N10 April 2000 QFET TM FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

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FQB33N10 FQI33N10 FQI33N10TU O-262 FQI33N10

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