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Untitled Abstract: No abstract text available Text: FQB5N90 / FQI5N90 September 2000 QFET TM FQB5N90 / FQI5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQB5N90 FQI5N90 FQI5N90TU O-262 FQI5N90	PDF

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Text: FQB5N90 / FQI5N90 September 2000 QFET TM FQB5N90 / FQI5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

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FQB5N90 FQI5N90 FQI5N90TU O-262 FQI5N90

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