Untitled
Abstract: No abstract text available
Text: FQD19N10L / FQU19N10L January 2009 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
PDF
|
FQD19N10L
FQU19N10L
|
FQD19N10
Abstract: FQU19N10
Text: FQD19N10 / FQU19N10 January 2009 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
PDF
|
FQD19N10
FQU19N10
FQU19N10
|
Untitled
Abstract: No abstract text available
Text: FQD19N10 / FQU19N10 January 2009 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
PDF
|
FQD19N10
FQU19N10
|
FQD19N10L
Abstract: FQU19N10L
Text: FQD19N10L / FQU19N10L January 2009 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
PDF
|
FQD19N10L
FQU19N10L
FQU19N10L
|
Untitled
Abstract: No abstract text available
Text: FQD19N10L / FQU19N10L August 2000 QFET TM FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
PDF
|
FQD19N10L
FQU19N10L
FQD19N10LTF
O-252
FQD19N10LTM
|
Untitled
Abstract: No abstract text available
Text: FQD19N10 / FQU19N10 August 2000 QFET TM FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
PDF
|
FQD19N10
FQU19N10
FQU19N10TU
O-251
FQU19N10
|
FQD19N10L
Abstract: FQU19N10L
Text: FQD19N10L / FQU19N10L August 2000 QFET TM FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
PDF
|
FQD19N10L
FQU19N10L
FQU19N10L
|
FQD19N10
Abstract: FQU19N10
Text: FQD19N10 / FQU19N10 August 2000 QFET TM FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
PDF
|
FQD19N10
FQU19N10
FQU19N10
|
Untitled
Abstract: No abstract text available
Text: FQD19N10L / FQU19N10L August 2000 QFET TM FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
PDF
|
FQD19N10L
FQU19N10L
FQU19N10LTU
O-251
FQU19N10L
|
FQD19N10TM
Abstract: No abstract text available
Text: FQD19N10 / FQU19N10 August 2000 QFET TM FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
PDF
|
FQD19N10
FQU19N10
FQD19N10TF
O-252
FQD19N10TM
FQD19N10TM
|
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
|
Original
|
PDF
|
|
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
|
Original
|
PDF
|
SC70-6
SC75-6
SuperSOTTM-3/SOT-23
Power247TM,
FLMP SuperSOT-6
Complementary MOSFETs buz11
FQD7P20
FDG6316
IRF650
FQP65N06
IRFS630
FDG329N
FDP2532
fqpf6n80
|
IRFU210A
Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031
|
Original
|
PDF
|
O-251
O-251
FDU3706
FDU6512A
ISL9N308AD3
ISL9N312AD3
ISL9N306AD3
FDU6644
FDU6680A
FDU7037P06
IRFU210A
IRFU230A
FDU3706
FDU6030BL
FDU6512A
FDU6612A
FDU6644
FDU6680A
FDU6692
FDU7030BL
|
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
|
Original
|
PDF
|
SC70-6
OT-23)
FDR8321L
FDR8521L
FDFS2P106A
FDFS2P103
FDFS2P102
SSP6N60A
IRF650
IRF540 mosfet with maximum VDS 12v
SSP2N60B
SSS7N60B
ssr2955
IRFS630A
SSP4N60A
sss3n90a
IRF634A
|
|
|
