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    FR 302 DIODE Search Results

    FR 302 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    FR 302 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking JE 6 SOP

    Abstract: No abstract text available
    Text: MQ302-05 Application Manual Real Time Clock Module RTC-4574SA/JE Model Product Number RTC-4574SA Q4145745x000200 RTC-4574JE Q4145747x000100 In pursuit of "Saving" Technology ,Epson electronic device. Our Lineup of semiconductors, Liquid crystal displays and quartz devices


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    MQ302-05 RTC-4574SA/JE RTC-4574SA RTC-4574JE Q4145745x000200 Q4145747x000100 marking JE 6 SOP PDF

    Untitled

    Abstract: No abstract text available
    Text: MQ302-05 Application Manual Real Time Clock Module RTC-4574SA/JE Model Product Number RTC-4574SA Q4145745x000200 RTC-4574JE Q4145747x000100 In pursuit of "Saving" Technology ,Epson electronic device. Our Lineup of semiconductors, Liquid crystal displays and quartz devices


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    MQ302-05 RTC-4574SA/JE RTC-4574SA RTC-4574JE Q4145745x000200 Q4145747x000100 PDF

    R4574

    Abstract: VSOJ-20 RTC-4574
    Text: MQ302-04 Application Manual Real Time Clock Module RTC-4574SA/JE Model Product Number RTC-4574SA Q41457450000200 RTC-4574JE Q41457470000100 In pursuit of "Saving" Technology ,Epson electronic device. Our Lineup of semiconductors, Liquid crystal displays and quartz devices


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    MQ302-04 RTC-4574SA/JE RTC-4574SA RTC-4574JE Q41457450000200 Q41457470000100 R4574 VSOJ-20 RTC-4574 PDF

    R4574

    Abstract: RTC4574SA VSOJ-20 4574N RTC-4574
    Text: MQ302-06 Application Manual Real Time Clock Module Model Product Number RTC-4574SA Q4145745x000200 RTC-4574JE Q4145747x000100 RTC-4574NB Q4145749xxxxx00 In pursuit of "Saving" Technology ,Epson electronic device. Our Lineup of semiconductors, Liquid crystal displays and quartz devices


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    MQ302-06 RTC-4574SA RTC-4574JE RTC-4574NB Q4145745x000200 Q4145747x000100 Q4145749xxxxx00 R4574 RTC4574SA VSOJ-20 4574N RTC-4574 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. FR301 thru FR307 1.Feature & Dimensions Fast Switching Rectifiers * Plastic package has Underwriters Laboratory * * * * * * * * Reverse Voltage 50 to 1000V Forward Current 3.0A Flammability Classification 94V-0 High temperature metallurgically bonded construction


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    FR301 FR307 MIL-S-19500 DO-201AD, DO-41 DO-15 DO-201AD 26/tape DO-201ADç DO-201AD PDF

    fr diodes

    Abstract: No abstract text available
    Text: FR301 - FR307 3.0A FAST RECOVERY RECTIFIER Features • · · · · Low Reverse Recovery Time Trr Low Reverse Current Low Forward Voltage Drop High Current Capability Plastic Material - UL Recognition 94V-0 B A A C D Mechanical Data · · · · · DO-201AD


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    FR301 FR307 DO-201AD, MIL-STD-202 DO-201AD FR304 FR305 DS26003 fr diodes PDF

    FR301

    Abstract: FR304 FR307 PR3001G PR3007G DS26003
    Text: FR301 - FR307 3.0A FAST RECOVERY RECTIFIER NOT RECOMMENDED FOR NEW DESIGNS, PLEASE USE PR3001G - PR3007G Features • · · · · Low Reverse Recovery Time Trr Low Reverse Current Low Forward Voltage Drop High Current Capability Plastic Material - UL Recognition 94V-0


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    FR301 FR307 PR3001G PR3007G DO-201AD DO-201AD, MIL-STD-202 temperatur04 FR305 FR304 FR307 PR3007G DS26003 PDF

    Diode marking CODE UF SOD

    Abstract: Diode-250V BAS21 marking code js sod323 diode D323 marking code 18 surface mount diode
    Text: WILLAS FM120-M+ THRU BAS21H FM1200-M 200mA Surface Mount Switching Diode-250V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPackage RECTIFIERS -20V- 200V SOD-323 Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


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    200mA Diode-250V D-323 OD-123+ FM120-M+ BAS21H FM1200-M OD-123H FM120-MH FM130-MH Diode marking CODE UF SOD BAS21 marking code js sod323 diode D323 marking code 18 surface mount diode PDF

    keysight

    Abstract: APC7 connector apc-7 connector
    Text: Keysight Technologies 8761A/B Microwave Switches Technical Overview - Broadband dc to 18 GHz - User specified connectors (over 250 possible combinations) - Excellent repeatability (typically 0.03 dB after 1,000,000 cycles) - Environmentally rugged 02 | Keysight | 8761A/B Microwave Switches - Technical Overview


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    761A/B 8761B 50-ohm BP-06-09-14) keysight APC7 connector apc-7 connector PDF

    FRGB1315C

    Abstract: LED TRI-COLOR FAGB1315C
    Text: 1315C Series Top View Type Tri-color Features Top View Type, Milky White Resin Package Product features ・Outer Dimension 1.65 x 2.1 x 0.4 mm L x W x H ・Temperature range. Storage Temperature : -40℃~100℃ Operating Temperature : -40℃~ 85℃


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    1315C FRGB1315C LED TRI-COLOR FAGB1315C PDF

    FR 302 Diode

    Abstract: No abstract text available
    Text: 1315C Series Top View Type Tri-color Features Top View Type, Milky White Resin Package Product features ・Outer Dimension 1.65 x 2.1 x 0.4 mm L x W x H ・Temperature range. Storage Temperature : -40℃~100℃ Operating Temperature : -40℃~ 85℃


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    1315C 470nm 533nm 605nm 626nm FR 302 Diode PDF

    FAGB1315C

    Abstract: FRGB1315C FR98
    Text: 1315C Series Top View Type Tri-color Features Top View Type, Milky White Resin Package Product features ・Outer Dimension 1.65 x 2.1 x 0.4 mm L x W x H ・Temperature range. Storage Temperature : -40℃~100℃ Operating Temperature : -40℃~ 85℃


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    1315C FAGB1315C FRGB1315C FR98 PDF

    FR 302 Diode

    Abstract: E F 302
    Text: SIEMENS BYP 302 FRED Diode • Soft recovery characteristics Type ^RRM ^FRMS BYP 302 1200 V 40 A 130 ns Package '> Ordering Code TO-218 AD C67047-A2252-A2 Maximum Ratings Parameter Mean forward current Tc = 90 ‘C, D = 0.5 RMS forward current Surge forward current


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    O-218 C67047-A2252-A2 50-Hz FR 302 Diode E F 302 PDF

    FR251

    Abstract: FR252 FR253 FR254 FR255 FR256 FR257 FR301 FR302 FR303
    Text: DIODES INCORPORATED D~| 5848713 0000378 3 | / ~ c 3 ~ '7 FAST RECOVERY RECTIFIERS O P E R A T IN G A N D S T O R A G E T E M P E R A T U R E -65°C to + 175°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz


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    FR251 FR252 FR253 FR254 FR255 FR256 FR257 FR506 FR507 FR601 FR301 FR302 FR303 PDF

    5763M

    Abstract: u302
    Text: *i K / Light Emitting Diodes LUM-5763MU302 LUM-5763MU302 *24 X 24* Dot*Matrix • Unit; * h L U M -5 7 6 3 M U 3 0 2 l i 7 J l / 7 ? A ' 7 K • Dimensions U n it: mm < v o m m s t 'f f lji ic - if f f lT ' i 5 24 X 24 K y h T h ' J i * * ^ i§ T - fr o


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    LUM-5763MU302 -5763M 5763M u302 PDF

    MARKING 303 SOT23

    Abstract: 302 SOT-23 DIODE DIODE MARKING CODE G SOT23 marking code 302 Marking Code .25c sot23 Diode Marking ef marking pd marking LLA marking code C2 diode diode MARKING CODE C2
    Text: Central" CMPD3003 CMPD3003A CMPD3003C CMPD3003S Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manu­ factured by the epitaxial planar process,


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    CMPD3003 CMPD3003A CMPD3003C CMPD3003S OT-23 CMPD3003S MARKING 303 SOT23 302 SOT-23 DIODE DIODE MARKING CODE G SOT23 marking code 302 Marking Code .25c sot23 Diode Marking ef marking pd marking LLA marking code C2 diode diode MARKING CODE C2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 4726 FP302 No.4726 TR:NPN E pitaxial P la n ar Silicon T ransistor SBD:Schottky B arrier Diode SAMYO i DC-DC Converter Applications F e a tu r e s • Composite type with NPN tra n sisto r and Schottky b a rrie r diode facilitates high-density mounting.


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    FP302 FP302 2SC4520 SB05-05CP, 250mm2X PDF

    u212

    Abstract: IRFR122 u210 irfr210 U2-12
    Text: tME T> SAMSUNG ELECTRONICS INC m 7Tb4142 GD1233S ñ3ñ « S n G K IR F R 2 1 0/212 IR F U 2 1 0/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R q s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    7Tb4142 DD1233S IHFR210/212 IRFU210/212 IRFR210/U210 IRFR122/U212 IRFR210/21 IRFU210/212 IRFR212/U212 u212 IRFR122 u210 irfr210 U2-12 PDF

    BUZ332A

    Abstract: BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345
    Text: Typenübersicht Selection Guide SIEM ENS SIPMOS Power Transistors N Channel Power Transistors s > 7 X s TO-220 AB ^D S ^ D S o n V Q 50 50 50 50 50 50 50 50 50 18m 28m 30m 35m 40m 55m 70m 0.1 0.12 60 60 60 60 60 18m 40m 70m 0.10 0.15 100 100 100 100 100


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    VUT05152 O-220 O-218 O-204 346S2 BUZ332A BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345 PDF

    be 303

    Abstract: No abstract text available
    Text: Optoisolator Specifications SL5511 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5511 consists o f a gallium arsenide, infrared em itting diode coupled with a silicon phototransistor in a dual in-line package. T h e SL5511 com plies with UTE requirem ents as per UTE C96-551 ADD2.


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    SL5511 SL5511 C96-551 be 303 PDF

    BYV32F

    Abstract: BYV32F-50
    Text: BYV32F SERIES T -03-1 7 PHILIPS INTERN A T I O N A L SbE J> 711002b J V_ 00413bfl âlfl • PHIN ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic


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    BYV32F T-03-17 711002b 00413L. OT-186 004137b BYV32F-50 PDF

    KT805AM

    Abstract: 4506 gen VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN PCL805 transistor kt transistor k 3728 D226B rft elektronik Elektronika SY320
    Text: SERVICE-M ITTEILUN GEN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN r a d i o - television JANUAR 1 1983 SEITE Mitteilung aus dem VEB RFT Induatrlevertrieb R.u.F. Leipzig / S ELEKTRONIKA 302 - stabilisiertes Netzteil Der sowjet. Hersteller hat 300 stabilisierte Setzteile über den


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module BSM 651 F Vos = 500 V lD = 6 X 9 A ^DS on = 0.7 Q • • • • • • • Power m odule 3 -p ha se fu ll-b rid g e FREDFET N channel E nhancem ent m ode Package with insulated m etal base plate C ircuit diagram : Fig . 3 a ’ )


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    7076-A 500-A PDF

    Untitled

    Abstract: No abstract text available
    Text: bbE D INTEGRATED DEVICE 4625771 Q D l B b m 732 * I D T FAST CMOS 16-BIT BUFFER/LINE DRIVER IDT54/74FCT16240T/AT/CT/ET IDT54/74FCT162240T/AT/CT/ET In teg rated Device Technology, Inc. FEATURES: DESCRIPTION: • Common features: T he ID T 5 4 /7 4 F C T 16 2 4 0 T /A T /C T /E T and ID T 5 4 /


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    16-BIT IDT54/74FCT16240T/AT/CT/ET IDT54/74FCT162240T/AT/CT/ET 74FCT162240T/AT/CT/ET 16-bit IDT54/74FCT16240T/AT/CT/ET 162240T/AT/CT/ET IL-STD-883, PDF