Untitled
Abstract: No abstract text available
Text: S T S 2306 S amHop Microelectronics C orp. S E P , 14 2004 V 1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.
|
Original
|
OT-23
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S T S 2306 S amHop Microelectronics C orp. Apr,21 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.
|
Original
|
OT-23
OT-23
|
PDF
|
9906V
Abstract: 660 tg diode s608
Text: S DS 9906 S amHop Microelectronics C orp. J UL. 30 2004 v1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 60 @ V G S = 4V
|
Original
|
OT-23
OT-23
9906V
660 tg diode
s608
|
PDF
|
fr 608 diode
Abstract: DIODE REDRESSEMENT 1N SERIES DIODE B-408 diode ku 611 KU 612 diode 736 diode RP 4040 fr 608 KU1506
Text: rectifier diodes < 100 A diodes de redressement < 100 A Types THOMSON-CSF •o V r MVI I f SM 10 ms vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B,(R) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R) 1N 1198 A, (R)
|
OCR Scan
|
1000A2
2500A2
6xCB80
6xP150
6xTNF150
fr 608 diode
DIODE REDRESSEMENT
1N SERIES DIODE
B-408 diode
ku 611
KU 612
diode 736
diode RP 4040
fr 608
KU1506
|
PDF
|
Diodes de redressement
Abstract: BAY21 BAY18 BOITIER MU86 f 1010 fr 608 TF80 650C RG606 fr 1004 diodes
Text: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes VRWM 'FSM VF @ •f r m 10 ms •f m A (A) (V) vrmm TYPES 60 A / 'F (A) tease = 75°C •R G 6 0 2 F -R G 6 0 2 *RG 604 F - RG 604 •RG 606 F - RG 606 *RG 608 F - RG 608 *RG 610 F - RG 610 100 A
|
OCR Scan
|
|
PDF
|
diode RP 1040
Abstract: DRA 402 DIODE 1N SERIES DIODE DRA402 DRA 402 diode RP 4040 diode 1N 3768 r RP8040R fr 608 diode DIODE REDRESSEMENT 4040
Text: rectifier diodes < 100 A diodes de redressement < 100 A Types TH O M S O N -C SF •o V r MVI If SM 10 m s vF A (V) (A ) (V ) / if m ax 20 A 1N 1N 1N 1N 1N 1N 1N RN RN RN RN / T c a s e = 1 5 0 °C 248 B, (R) 249 B ,(R ) 250 B, (R) 1195 A , (R) 1196 A, (R)
|
OCR Scan
|
1000A2
2500A2
CB-3191
diode RP 1040
DRA 402 DIODE
1N SERIES DIODE
DRA402
DRA 402
diode RP 4040
diode 1N 3768 r
RP8040R
fr 608 diode
DIODE REDRESSEMENT 4040
|
PDF
|
DIODE REDRESSEMENT 4040
Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Text: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)
|
OCR Scan
|
1000A2
2500A2
TNF300
DIODE REDRESSEMENT 4040
RP 8040 X
diode RP 4040
la 8040
G 402 rp
402 rp
KU 612
RP8040
DRA402
LA 4040
|
PDF
|
m10z10
Abstract: No abstract text available
Text: 5-1. Rectifier Diodes •Surface Mount Type Ta=25°C Absolute Maximum Ratings Type No. Vrm Iw fl IFSM (V) (A) (A) Tj : Contutori (Vi max ; i/i A) (A) max 30 Type No. Vrm Hm Im i (V) ÍA) (A) Electrical Characteristics Vf Donation Tstg (V) ft) RM 4 Y 100
|
OCR Scan
|
-406H
BV-601
-406M
m10z10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ST 6^27525 N E C ELECTRONICS INC. D E j b 4 E 7 S E S OOOSbD? b 59C 0 5 6 0 7 D I T-41-05 LASER DIODE NDL3001 DAD,VD A PPLICA TIO N AIGaAs DOUBLE H ETER O STR U C TU R E LA SER DIODE D E S C R IP T IO N NDL3001 laser diode is developed for D A D Digital Audio Disk , Video Disk optical head and non impact laser printer. The
|
OCR Scan
|
T-41-05
NDL3001
NDL3001
J-41-05
J22686
|
PDF
|
BYD74E
Abstract: BYD74A BDY74A BYD74
Text: N AMER PHILIPS/DISCRETE b*ìE J> m bbSB'iai DDEbbEO b4T • APX _ 1 BYD74 SERIES EPITAXIAL AVALANCHE DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes. They feature low
|
OCR Scan
|
1BYD74
BDY74A
BYD74
bbS3T31
002bbS7
BYD74E
BYD74A
BDY74A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SFH 608 SIEMENS FEATURES • Very High CTR at IF=1 mA, VCE=0.5 V - SFH608-2, 63-125% - S F H 6 0 8 -3 ,100-200% - S F H 6 0 8 -4 ,160-320% - SFH608-5, 250-500% • Specified Minimum CTR at lF=0.5 mA, VCE=1.5 V: > 32% typ. 120% Good CTR Linearity with Forward Current
|
OCR Scan
|
SFH608-2,
SFH608-5,
E52744
|
PDF
|
Untitled
Abstract: No abstract text available
Text: G E SOLID STATE □1 DE I 3Ö7SDÖ1 G o n t a t Optoelectronic Specifications. Photon Coupled Isolator H11A1, H11A2, H11A3, H11A4, H11A5 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor T h e G E Solid S ta te H l l A i th ru H 11A 5 consist o f a gallium arsenide
|
OCR Scan
|
H11A1,
H11A2,
H11A3,
H11A4,
H11A5
H11A5
|
PDF
|
2SC4535
Abstract: RCP 400 F
Text: Power Transistors 2SC4535 2SC4535 Preliminary Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Pow er Switching Unit - mm 5 2max. • Features "Í-3.2 6.9min. h-»1 o -fr • High speed switching T wo O <M +1 Ö Absolute Maximum Ratings (Tc= 25° C)
|
OCR Scan
|
2SC4535
200mA,
001bL
2SC4535
RCP 400 F
|
PDF
|
HIIAA
Abstract: 4 n 608 608 diode optoelectronic ic ge h11a
Text: G E SOLI » STATE □i »E|3a?5oai Dont^fl Optoelectronic Specification* T-V/-53 A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistor The GE Solid State H11A A 1 — H 11A A4 consist of two gallium arsenide infrared emitting
|
OCR Scan
|
T-V/-53
H11AA1-H11AA4
H11AA,
2N5308-D45H8
HIIAA
4 n 608
608 diode
optoelectronic ic
ge h11a
|
PDF
|
|
|
byd74
Abstract: BYD74E BYD74A BDY74A
Text: SbE » 711002b 0CI40bl7 101 • PHIN BYD74 SERIES PHILIPS INTERNATIONAL SbE ]> v n m n m i v EPITAXIAL AVALANCHE DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching characteristics
|
OCR Scan
|
711002b
BYD74
BDY74A
7ZB0B71
711005b
T-03-17
BYD74E
BYD74A
BDY74A
|
PDF
|
DIODE F10
Abstract: f10f10 TRANSISTOR p50
Text: SFH608 Infineon APPLICATIONS Telecommunications Industrial Controls Office Machines Microprocessor System Interfaces Dimensions in inches mm pin one ID f3l Í21 Anode Optocouplers FEATURES • Very High CTR at / F=1.0 mA, VCE=0.5 V - SFH608-2,63-125% - SFH608-3,100-200%
|
OCR Scan
|
SFH608
SFH608-2
SFH608-3
SFH608-4
SFH608-5,
Photot2-226
SFH608
1-888-lnfineon
DIODE F10
f10f10
TRANSISTOR p50
|
PDF
|
DS7830
Abstract: DS8830 SN55182 SN55183 SN75182 SN75183
Text: DS8830, SN55183, SN75183 DUAL DIFFERENTIAL LINE DRIVERS SLLS093B - OCTOBER 1 9 7 2 - REVISED - MAY 1995 Single 5-V Supply Differential Line Operation Dual Channels TTL Compatibility Short-Circuit Protection of Outputs Output Clamp Diodes to Terminate Line
|
OCR Scan
|
DS8830,
SN55183,
SN75183
SLLS093B
SN55182
SN75182
DS7830
DS8830
SN55183
DS8S30,
DS8830
SN55183
SN75183
|
PDF
|
AP 4812
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) S * ' Anode = SFH 4 8 0 C a th o d e = SFH 4 0 0 SFH 480 SFH 481 SFH 482 (p a cka g e ) 1 4 .5 1 2 .5 ' A p p r o x . w e ig h t 0 . 3 5 g Anode = C a th o d e = 2 .7 0 0 .4 5 - • - C h ip
|
OCR Scan
|
a23SbOS
AP 4812
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LT1030 QUAD LO W -PO W ER LIN E DRIVER 0 3 2 9 7 . A P R IL 1 9 8 9 • Low Supply Voltage . . . ± 5 V to ± 15 V • Supply Current . . . 500 1A Typ • Zero Supply Current When Shut Down • Outputs Can Be Driven ± 30 V LT1030 R E V IS E D J U L Y 1 9 8 9
|
OCR Scan
|
LT1030
10-mA
ANSI/ElA-232-D-1986
RS-232-C)
LT1030
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES 3 V/5 V, 4/8 Channel High Performance Analog Multiplexers ADG608/ADG609 FUN CTIO N AL B L O C K D IA G RA M S FEA T U R ES +3 V , +5 V , ±5 V Pow er Supplies ADG608 V ss to V DD A nalog Signal Range Low On Resistance 30 i l max Fast Sw itching Tim es
|
OCR Scan
|
ADG608/ADG609
ADG608
ADG609
AD7840/8,
16-Pin
R-16A)
|
PDF
|
td62308
Abstract: No abstract text available
Text: TD62308AP/BP/F/AF Unit in mm o LOW SATURATION DRIVER FEATURES . Output Current . . High Sustaining Voltage . . . . . . . . 1.5A 50V Type-AP 80V (Type-BP) 35V (Type-F) 45V (Type-AF) L o w Level Active Inputs TTL and C-MOS Compatible Inputs
|
OCR Scan
|
TD62308AP/BP/F/AF
DIP-16
HSOP-16
td62308
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM EN S Mini PROFET BSP 550 MiniPROFET • • • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load
|
OCR Scan
|
Q67000-S311
GPSD5560
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V
|
OCR Scan
|
SN75468,
SN75469
SLRS023B
500-mA
ULN2003A
ULN2004A,
SN75468
SN75469
ilbl724
DlD10b2
|
PDF
|
sw 2608
Abstract: IC tc 2608 C2608 823B
Text: HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS IDT54/74FCT821A/B/C IDT54/74FCT823A/B/C IDT54/74FCT824A/B/C IDT54/74FCT825A/B/C Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology.
|
OCR Scan
|
IDT54/74FCT821A/B/C
IDT54/74FCT823A/B/C
IDT54/74FCT824A/B/C
IDT54/74FCT825A/B/C
Am29821-25
IDT54/74FCT821
/823A/824A/825A
IDT54/74FCT800
IDT54/74FCT820
IDT54/
sw 2608
IC tc 2608
C2608
823B
|
PDF
|
