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    FR1T Search Results

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    FR1T Price and Stock

    ams OSRAM Group LG-T67F-R1T1-24-1-20-R18-Z

    LED GREEN CLEAR 2PLCC SMD
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    DigiKey LG-T67F-R1T1-24-1-20-R18-Z Cut Tape 25,458 1
    • 1 $0.28
    • 10 $0.191
    • 100 $0.1345
    • 1000 $0.10005
    • 10000 $0.10005
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    LG-T67F-R1T1-24-1-20-R18-Z Digi-Reel 25,458 1
    • 1 $0.28
    • 10 $0.191
    • 100 $0.1345
    • 1000 $0.10005
    • 10000 $0.10005
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    LG-T67F-R1T1-24-1-20-R18-Z Reel 24,000 2,000
    • 1 -
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    • 10000 $0.0797
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    STMicroelectronics STR752FR1T7

    IC MCU 32BIT 128KB FLASH 64LQFP
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    DigiKey STR752FR1T7 Tray
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    Avnet Americas STR752FR1T7 Tray 111 Weeks 960
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    STMicroelectronics STR755FR1T6

    IC MCU 32BIT 128KB FLASH 64LQFP
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    DigiKey STR755FR1T6 Tray 960
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    Avnet Americas STR755FR1T6 Tray 111 Weeks 960
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    EBV Elektronik STR755FR1T6 143 Weeks 160
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    STMicroelectronics STR752FR1T6

    IC MCU 32BIT 128KB FLASH 64LQFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STR752FR1T6 Tray 960
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    Avnet Americas STR752FR1T6 Tray 111 Weeks 960
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    EBV Elektronik STR752FR1T6 143 Weeks 160
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    STMicroelectronics STR711FR1T6

    IC MCU 32BIT 128KB FLASH 64LQFP
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    DigiKey STR711FR1T6 Tray 960
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    RS STR711FR1T6 Bulk 10
    • 1 -
    • 10 $12.62
    • 100 $9.05
    • 1000 $9.05
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    Rochester Electronics STR711FR1T6 839 1
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    • 1000 $6.64
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    Avnet Silica STR711FR1T6 143 Weeks 160
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    EBV Elektronik STR711FR1T6 143 Weeks 160
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    FR1T Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FR1T.FR1Y /3 Surface mount diode Fast silicon rectifier diodes  3   0 9  :  4  :  : , %,  4  :  : ,   8 : , /; 5 2  16 5 * & #9% # *> * *? #6= # *-? *-? *-?   :    : 3  16 5 -2 & 19 5 * &


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    PDF

    fr1t

    Abstract: No abstract text available
    Text: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,FR1T Strobe Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs


    Original
    DO-41 fr1t PDF

    toshiba diode do-41

    Abstract: toshiba diode "do-41" fr1t TOSHIBA DIODE DATABOOK transistor c945 datasheet 1S1830
    Text: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,FR1T Strobe Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs


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    DO-41 toshiba diode do-41 toshiba diode "do-41" fr1t TOSHIBA DIODE DATABOOK transistor c945 datasheet 1S1830 PDF

    fr1n

    Abstract: FR1T
    Text: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,FR1T Strobe Applications Fast Recovery • Unit: mm Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs


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    DO-41 fr1n FR1T PDF

    fr1t

    Abstract: TFR1N
    Text: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, FR1T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A · Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V · Reverse Recovery Time: trr = 10 µs


    Original
    DO-41 fr1t TFR1N PDF

    fr1t

    Abstract: 1S1830 fr1n
    Text: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, FR1T Strobo Flasher Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 10 µs


    Original
    000707EAA1 1S1830 fr1t 1S1830 fr1n PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, FR1T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A · Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V · Reverse Recovery Time: trr = 10 µs


    Original
    DO-41 PDF

    Untitled

    Abstract: No abstract text available
    Text: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, FR1T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 10 µs


    Original
    DO-41 PDF

    fr1t

    Abstract: No abstract text available
    Text: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,FR1T Strobe Applications Fast Recovery • Unit: mm Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs


    Original
    DO-41 fr1t PDF

    yx 801

    Abstract: UPD78328GF power supply for stk 4141 yx 801 ic bl60 UPD78328 CM04S PD78327 lopg stk 2125
    Text: M o s m m m f à M O S In te g ra te d C irc u it PD78327,78328 n PD78328 it, S 1 4 tll6 t* -y h CPU Z f à M L t z 78K/III '> U 7 . - n - - y h c7 PWM i f - f /¿PD78322 <75 U T^U ¿ " f A • /\°;u > A — ? iM f f i L î L fc„ ¿¿PD78327 Ì, //PD78328 (7) ROM U ^ Î b T ' Î .


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    uPD78327 uPD78328 PD78328 78K/III PD78322 PD78327 //PD78328 WH-ftF51« yx 801 UPD78328GF power supply for stk 4141 yx 801 ic bl60 CM04S PD78327 lopg stk 2125 PDF

    K1V33

    Abstract: K1V34 K1V36 K1V38
    Text: >@ K1V33 W / K1V34(W) / K1V36(W) / K1V38(W) T /= 25 °C / Unless otherwise specified) A b solu te M axim um Ratings & ft C o n d itio n s SB-t a m Item fS fffiK Storage Temperature »•S-SWK Operating Junction Temperature ^ 7 MS : Maximum Off-state Voltage


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    K1V33 K1V34 K1V36 K1V38 Z314-5 PDF

    MC6839

    Abstract: MAX1004
    Text: MOTOROLA MC6839 Advance Information MOS N -C H A N N E L, SILICON-GATE} F L O A T IN G - P O IN T R O M T h e M C 6 8 3 9 s ta n d a r d p r o d u c t R O M p ro v id e s f lo a tin g p o in t c a p a b ility fo r th e M C 6 8 0 9 o r M C 68G 9E M P U . T h e M C 6 8 3 9 im p le m e n ts th e e n tir e


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    MC6839 te6839 MC6839 MAX1004 PDF

    HD63310P20

    Abstract: hd63310p
    Text: HD63310R-Smart Dual Port RAM S-DPRAM D escription P in A rra n g e m e n t Driven by th e declining costs of VLSI CPUs, n ew m ultiprocessing and parallel-processing architectures are being explored to break the perform ance barrier of single CPU designs. A


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    HD63310R---------------Smart HD63310R HD63310R HD63310P20 hd63310p PDF

    RELE RAS 1210

    Abstract: HD63310P20
    Text: HD63310R-Smart Dual Port RAM S-DPRAM Description Pin Arrangement Driven by the declining costs of VLSI CPUs, new m ultiprocessing and parallel-processing architectures are being explored to break the perform ance barrier of single CPU designs. A


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    HD63310R----------------Smart HD63310R HD63310R RELE RAS 1210 HD63310P20 PDF

    hd63310

    Abstract: hd63310rp20 HD63310P
    Text: HD63310R-Smart Dual Port RAM S-DPRAM D escription P in A rra n g e m e n t D riven by th e d eclin in g co sts of VLSI CPUs, n e w m u ltip ro cessin g a n d p a ra lle l-p ro c e ssin g a rc h ite c tu re s a re b e in g e x p lo re d to b re a k th e


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    HD63310R----------------Smart HD63310R HD63310R hd63310 hd63310rp20 HD63310P PDF