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Text: PG1114 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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Text: 2SC2563 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.55 h(FE) Max. Current gain.240
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Text: PG1113 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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Text: PG1105 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)170 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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Text: PG1341 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)70 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)5.0
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Text: NS1672 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: NS1975 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC2547 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: FZT855 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)250 I(C) Max. (A)5 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)200 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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Text: PG1116 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)150 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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Text: PG1102 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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Text: PG2067 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)0.5
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Text: PG1119 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)0.5
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Text: PG1101 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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Text: 2N3859 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)18 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC2543D Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)90 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: BUY49 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)220 V(BR)CBO (V)250 I(C) Max. (A)10 Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.150Â
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Text: PG1110 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)150 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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Text: PG1112 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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Text: PG1104 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)150 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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Text: 2N3858 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)18 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC2543E Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)90 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC2543 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N1839 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.5u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.4 @I(C) (A) (Test Condition)150m
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