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    Untitled

    Abstract: No abstract text available
    Text: PG2067 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)0.5


    Original     		PG2067 Freq90MÃ PDF

    PG2020

    Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
    Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6


    OCR Scan     		2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 PG2020 PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053 PDF

    pg2004

    Abstract: PG2011 pg2001 PG2006
    Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE


    OCR Scan     		2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 pg2004 PG2011 pg2001 PG2006 PDF