1N914
Abstract: A279308-12 A279308L-12
Text: A279308 Preliminary 512K X 8 OTP CMOS EPROM Document Title 512K X 8 OTP CMOS EPROM Revision History Rev. No. History Issue Date Remark Initial issue June 17, 1998 Preliminary Change CE from VIL to VIH during program verify mode Change 32-pin SOP package type to 32-pin TSOP type I
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A279308
32-pin
1N914
A279308-12
A279308L-12
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Untitled
Abstract: No abstract text available
Text: ISSI PACKAGING INFORMATION Plastic TSOP Package Code: T Type II N N/2+1 E1 E 1 Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D1 and E do not include mold flash protrusions and should be measured from the bottom of the
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1N914
Abstract: A279308L-55 A279308V-55
Text: A279308 Preliminary 512K X 8 OTP CMOS EPROM Document Title 512K X 8 OTP CMOS EPROM Revision History Rev. No. 0.0 History Issue Date Remark Preliminary Initial issue June 17, 1998 1.0 Change CE from VIL to VIH during program verify mode Change 32-pin SOP package type to 32-pin TSOP type I
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A279308
32-pin
1N914
A279308L-55
A279308V-55
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IC51-0242-1006-1
Abstract: TSOP 44 socket IC51-0482-2018 TSOP 48 socket ic 4008 0262 IC51-0322-1207-1 IC51-0282-1032-1 IC51-0322-1031-1 IC51-0322-1219
Text: IC51 - Clamshell Thin Small Outline Package TSOP Type I and II Part Number (Details) Specifications 1,000M Ω min. at 500V DC Insulation Resistance: Dielectric Withstanding Voltage: 700V AC for 1 minute 30m Ω max. at 10mA/20mV max. Contact Resistance:
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10mA/20mV
27x12
IC51-0262-1339
IC51-0442-1709
IC51-0502-1708
IC51-0242-1006-1
TSOP 44 socket
IC51-0482-2018
TSOP 48 socket
ic 4008
0262
IC51-0322-1207-1
IC51-0282-1032-1
IC51-0322-1031-1
IC51-0322-1219
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PDF
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ic189-0882-099
Abstract: IC189-0642-007 IC189-0642 IC189 0642 IC189 Series Open Top SOP, SSOP, TSOP Type I a IC189-0642-041 IC189-0642-069
Text: IC189 Series Open Top SOP, SSOP, TSOP (Type I and II) Part Number (Details) Specifications Insulation Resistance: 1,000M Ω min. at 100V DC, pitch 0.5 1,000M Ω min. at 500V DC, pitch 0.65, 0.8, 1.27 IC189 - 064 2 - 007 * - * Series No. Dielec. Withstd. Voltage: for 1 minute at 100 V AC, pitch 0.5
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IC189
10mA/20mV
IC189-0682-097
IC189-0702-074
80x34
IC189-0882-099
65x43
ic189-0882-099
IC189-0642-007
IC189-0642
0642
IC189 Series Open Top SOP, SSOP, TSOP Type I a
IC189-0642-041
IC189-0642-069
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CY7C1021
Abstract: No abstract text available
Text: CY7C1021 64K x 16 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW max. • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ
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CY7C1021
44-pin
400-mil
I/O16)
CY7C1021
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CY7C1021
Abstract: 107156 MIL-STD-883 method 3015 CY7C1021-15VC
Text: 021 CY7C1021 64K x 16 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW max. • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ
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CY7C1021
44-pin
400-mil
I/O16)
CY7C1021
107156
MIL-STD-883 method 3015
CY7C1021-15VC
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PDF
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CY7C1021
Abstract: No abstract text available
Text: CY7C1021 64K x 16 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW max. • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ
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CY7C1021
44-pin
400-mil
I/O16)
CY7C1021
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107156
Abstract: CY7C1021 7C1021-10
Text: 021 CY7C1021 64K x 16 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW max. • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ
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CY7C1021
44-pin
400-mil
I/O16)
CY7C1021
107156
7C1021-10
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TSOP 50 socket
Abstract: IC51-0442-1709 IC51-0262-1339 IC51-0502-1708
Text: IC51 - Clam shel l Thi n Sm all Out line Package TSOP Type II Part Number (Details) Specifications Insulation Resistance: Dielectric Withstanding Voltage: Contact Resistance: Operating Temperature Range: Mating Cycles: 1,000MΩ min. at 500V DC 700V AC for 1 minute
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10mA/20mV
27x12
IC51-0262-1339
IC51-0442-1709
IC51-0502-1708
TSOP 50 socket
IC51-0442-1709
IC51-0262-1339
IC51-0502-1708
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PDF
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S70G5-65-7KG
Abstract: No abstract text available
Text: d Mounting pad of TSOP (type II) The nominal dimensions of TSOP (thin small outline package) (type II) are determined by the plastic body width (E). In designing the mounting pads of this package, therefore, the body width (E) and pin dimensions (pin length: L1, length of flat portion of pin: L or length of soldered portion Lp) are important.
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S70G5-65-7KG
S70G5-65-7JG1
S70G5-65-7KG1
S34G7-50-7KD
S34G7-50-7JD
S54G7-80-7JF
S54G7-80-7KF
S48G8-80-7JF-1
S48G8-80-7KF-1
C10943X)
S70G5-65-7KG
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W24512AK-15
Abstract: No abstract text available
Text: W24010 inbond Electronics Corp. -~-l_p-w-e-_I.-I-I-P-IIII-y_ -1_-LI- .-.-mme.-.I_ I_., .-L-.~I-.-I-.III-.-~- -.a-m-m-._-_ 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24010 is a normal-speed, very low-power CMOS static RAM organized as 131072 x 8 bits that
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W24010
W24010
W240107OSL,
W24010-70LE
W24010-7OLI,
l-408-9436666
l-408-9436668
W24512AK-15
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from TSOP Type II
Abstract: No abstract text available
Text: Multiadapter - SMD TSOP I/II RE900 - FR4 EPOXY fibre-glass FR4 1.50 mm double-sided 35 µm CU pth - solder and component side with chemical NI/AU surface and solder stop mask - pitch spacings: 0.40 mm (15.7 mil); 0.50 mm (19.7 mil); 0.65 mm (26.5 mil); 0.80 mm (30 mil); 1.27 mm (50 mil)
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RE900
RE900-01
RE900-02
RE900-03
RE900-04
RE900-05
RE900-06
from TSOP Type II
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IC 4407
Abstract: IC235 TSOP 54 socket IC235-0442-207 4407 pin details 4407 TSOP 50 socket IC235-0542-218-2 IC235-0242-202 IC235-0082-236
Text: IC235 Series Open Top Thin and Small Outline Package (TSOP -Type II / SOP) Part Number (Details) Specifications 1,000M Ω min. at 500V DC 700V AC for 1 minute 30m Ω max. at 10mA/20mV max. –40°C to +150°C 10,000 insertions min. 30g min. per pin at minimum
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IC235
10mA/20mV
IC235-0502-209
IC235-0442-207
IC235-0542-218-2
IC235-0542-218
IC 4407
TSOP 54 socket
IC235-0442-207
4407 pin details
4407
TSOP 50 socket
IC235-0542-218-2
IC235-0242-202
IC235-0082-236
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PDF
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CY7C1021
Abstract: No abstract text available
Text: 1CY 7C10 21 PRELIMINARY CY7C1021 64K x 16 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW max. • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ
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CY7C1021
44-pin
400-mil
I/O16)
CY7C1021
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Untitled
Abstract: No abstract text available
Text: EK621016 64K X 16 Bit CMOS SRAM Features • Access Times 70ns, 100ns • Single 5V ±10% Power Supply • Industry Standard Pin Assignment • Package Options 44 pin TSOP Type II Pin Configuration Description The EK621016 from Eureka is a one-megabit den
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EK621016
100ns
EK621016
500mv
44pin
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PK131
Abstract: No abstract text available
Text: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y OCTOBER 1997 FEATURES DESCRIPTION • Access times of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They
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OCR Scan
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IS62LV1024L
IS62LV1024LL
IS62LV1024LL
072-word
PK13197TS32
TGG4404
PK131
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PDF
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IS61C1024
Abstract: No abstract text available
Text: I S 6 1 C 1 I S 6 1 C 1 2 2 4 4 ISSI L 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1997 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns • Low active power: 600 m W typical • Low standby power: 500 fiW (typical) C M O S standby The IS S IIS61C1024 and IS61C1024L are very high-speed,
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OCR Scan
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IIS61C1024
IS61C1024L
072-word
IS61C1024L-12JRI
IS61C1024L-12NRI
IS61C1024L-12KRI
IS61C1024L-12TRI
300-mil
400-mil
IS61C1024
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PDF
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Untitled
Abstract: No abstract text available
Text: ISSI IS 6 2 L V 1 2 8 1 6 L / L L PRELIMINARY INFORMATION OCTOBER 1999 128K x 16 CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 55, 70,100 ns The IS S IIS62LV12816L and IS62LV12816LL are high speed, 2,097,152-bit static RAMs organized as 131,072
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OCR Scan
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IIS62LV12816L
IS62LV12816LL
152-bit
IS62LV12816LL-55T
IS62LV12816LL-55B
IS62LV12816LL-55TI
IS62LV12816LL-55BI
IS62LV12816LL-70T
IS62LV12816LL-70B
IS62LV12816LL-70TI
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TSOP 1378
Abstract: 62C1024
Text: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y AUGUST 1997 FEATURES DESCRIPTION • A c c e s s tim e s of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They
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OCR Scan
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IS62LV1024L
IS62LV1024LL
IS62LV1024LL
072-word
450-mil
IS62LV1024LL-35QI
IS62LV1024LL-35TI
IS62LV1024LL-35TSI
TSOP 1378
62C1024
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Untitled
Abstract: No abstract text available
Text: ISST IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM a d v a n c e in fo rm a tio n FEATURES DESCRIPTION • High-speed access times: 8, 10,12 and 15 ns The IS S IIS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568
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OCR Scan
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IS61LV2568
IIS61LV2568
144-word
IS61LV2568-10K
IS61LV2568-10T
400-mil
IS61LV2568-10KI
IS61LV2568-10TI
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28 S F116 2 MEG x 8 FLASH MEMORY I^ IIC R O N 2 MEG x 8 5V/5V AND 3 V S m a r t V o l t a g e , SECTORED ERASE FEATURES • • • • • • • • • Thirty-two 64KB erase blocks Programmable sector lock Deep Power-Down Mode: 5p.A MAX 5V/5V operation (MT28F116 only):
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OCR Scan
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MT28F116
MT28SF116
100ns,
150ns
100ns
150ns
40LPIN
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IS61C1024
Abstract: IS61C1024-20M
Text: IS61C1024 IS61C1024L 128K x ISSI 8 HIGH-SPEED CMOS STATIC RAM Ja n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The IS S IIS61C 1024 and IS 61C 1024L are very high-speed, low power, 131,072-w ord by 8-bit CM O S static RAMs. T hey
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IS61C1024
IS61C1024L
IS61C
1024L
072-w
IS61CIS61C1024L-15JI
IS61C1024L-15NI
IS61C1024L-15KI
IS61C1024L-15MI
IS61C1024L-15TI
IS61C1024-20M
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Untitled
Abstract: No abstract text available
Text: issr IS61C5128 512K x 8 HIGH-SPEED CMOS STATIC RAM FEBRUARY 1999 FEATURES DESCRIPTION • High-speed access times: 10,12 and 15 ns The IS S IIS61C5128 is a very high-speed, low power, 524,288-word by 8-bit CMOS static RAM. The IS61C5128 is fabricated using IS S I's high-performance CMOS tech
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C5128
IIS61C5128
288-word
IS61C5128
IS61C5128-1
IS61C5128-1OT
400-mil
IS61C5128-12K
IS61C5128-12T
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