FSF10A60
Abstract: No abstract text available
Text: FRD Type : FSF10A60 OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
|
Original
|
PDF
|
FSF10A60
FSF10A60
FSF10A60/FSF10A60B
|
FSF10A60
Abstract: No abstract text available
Text: 10A Avg. 600 Volts FRED FSF10A60B •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current 実 効 順 電 流 R.M.S. Forward Current サ
|
Original
|
PDF
|
FSF10A60B
FSF10A60/FSF10A60B
FSF10A60
|
Untitled
Abstract: No abstract text available
Text: FRD Type : FSF10A60B OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
|
Original
|
PDF
|
FSF10A60B
FSF10A60B
FSF10A60/FSF10A60B
|
Untitled
Abstract: No abstract text available
Text: FRD Type : FSF10A60 OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
|
Original
|
PDF
|
FSF10A60
FSF10A60
FSF10A60/FSF10A60B
|
FSF10A60
Abstract: FSF10A60B
Text: FRD Type : FSF10A60B OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
|
Original
|
PDF
|
FSF10A60B
FSF10A60/FSF10A60B
FSF10A60
FSF10A60B
|
FSF10A60
Abstract: No abstract text available
Text: 10A Avg. 600 Volts FRED FSF10A60 •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current 実 効 順 電 流 R.M.S. Forward Current サ
|
Original
|
PDF
|
FSF10A60
FSF10A60/FSF10A60B
FSF10A60
|
FSF10A60
Abstract: No abstract text available
Text: FRD Type : FSF10A60 OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
|
Original
|
PDF
|
FSF10A60
FSF10A60
|
FSF10A60B
Abstract: No abstract text available
Text: FRD Type : FSF10A60B OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
|
Original
|
PDF
|
FSF10A60B
FSF10A60B
|
Untitled
Abstract: No abstract text available
Text: FRD Type：FSF10A60B •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
|
Original
|
PDF
|
TypeFSF10A60B
FSF10A60B
|
Untitled
Abstract: No abstract text available
Text: FRD Type：FSF10A60B •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
|
Original
|
PDF
|
TypeFSF10A60B
FSF10A60B
60/FSF10A60B
FSF10A60/FSF10A60B
|
Untitled
Abstract: No abstract text available
Text: FRD Type：FSF10A60 •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
|
Original
|
PDF
|
TypeFSF10A60
FSF10A60
|
Untitled
Abstract: No abstract text available
Text: FRD Type：FSF10A60 •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
|
Original
|
PDF
|
TypeFSF10A60
FSF10A60
Hal60/FSF10A60B
FSF10A60/FSF10A60B
|
diode smd ED 74
Abstract: 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR
Text: 目录 二极管—电磁干扰及电源的效率 —————————— 参考 整流杂波 ———————————————— 有3个系列的SBD ——————————————— SBD和热失控 ————————————————
|
Original
|
PDF
|
O-220
O-247
O-247
aSn-37Pb
bSn-37Pb
diode smd ED 74
200v dc 10A buck converter
1N538
30dl4
FRD FCF10A20
12v 50w smps
smps 10w 12V
FRD 31DF2
EIAJ ED-4701 B-121
VFIR
|
30V 20A 10KHz power MOSFET
Abstract: IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100
Text: 目录 二极管是功率半导体的基础 1 二极管的构造标记、基本特性 １ 一般整流二极管和高速二极管 2 确认二极管的基本特性的实验—试着测量正向特性和反向特性 2 （ 正 向电力损耗 ）加上（ 反 向电力损耗 ） — 使 用PN二极管时我们可以
|
Original
|
PDF
|
AC100/
0QY03
EP10HY03
EP10LA03
EP10QY03
OD-123
200270/W
EP10HA03
30V 20A 10KHz power MOSFET
IGBT 60A spice model
10EDB20
ICF-SW77
smd 1a 100v diode bridge
sbd diode S
2MV10
200v 3A schottky
31DF2
AC100
|
|
|
pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: FRD Type：FSF10A60 •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
|
Original
|
PDF
|
TypeFSF10A60
FSF10A60
Hal60/FSF10A60B
FSF10A60/FSF10A60B
|
31DF2 diode
Abstract: mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice
Text: 트랜지스터 기술 2004년 8월호 제1장 원고 파워 다이오드의 기본 특성 및 선정 전류 다이오드는 파워 반도체의 기본 파워 전력용 반도체에 흘려보낼 수 있는 전류 는 일반적으로 1A 이상입니다. 가장 기본적인
|
Original
|
PDF
|
2004/Sept.
AC100/
50/60Hz
DC12V
10kHz
OD-123
100/W
200/W
270/W
300/W
31DF2 diode
mosfet 600V 60A TO-220
MOSFET 50V 100A TO-220
200v 10A mosfet
Diode 31DQ04
200V 200A mosfet
ICF-SW77
IGBT 60A spice model
60v 10KHz ir MOSFET
LM317 spice
|
Untitled
Abstract: No abstract text available
Text: FRD Type：FSF10A60B •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧
|
Original
|
PDF
|
TypeFSF10A60B
FSF10A60B
60/FSF10A60B
FSF10A60/FSF10A60B
|
FCU20A40
Abstract: FSU05B60 Tc117 tc112 FSU05A40 FSU05A60 FSU20B60 FSU15A40 FCU20A20 FCU20B60
Text: Fast Recovery Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) IRM（mA) Tjmax 25°C (°C) 25°C trr (ns) Case Outline TO-220AC Full Pack FSF05A20 FSU05A20 FSU05A30 FSF05A40 FSU05A40 FSF05A60 FSU05A60 FSU05B60 200 200 300 400 400 600 600 600
|
Original
|
PDF
|
O-220AC
FSF05A20
FSU05A20
FSU05A30
FSF05A40
FSU05A40
FSF05A60
FSU05A60
FSU05B60
FSF10A20
FCU20A40
FSU05B60
Tc117
tc112
FSU20B60
FSU15A40
FCU20A20
FCU20B60
|
EIAJ ED-4701 B-121
Abstract: 200V 50A mos fet 1N538 ICF-SW77 31DF2 sony icf FCF10A20 FCH10A15 FSF10A60 LM317
Text: 목차 다이오드 — 노이즈와 전원 효율 참고 정류 노이즈 3 시리즈 SBD SBD 와 열폭주 1 고속 다이오드란 2 FRD 와 SBD 3 응용 회로와 니혼인터 SBD/FRD 4 역회복 특성 4-1 역회복 특성의 파형 상의 정의 4-2 역회복 특성 측정 회로
|
Original
|
PDF
|
1N538
O-220
O-247
Sn-37Pb
1030s
EIAJ ED-4701 B-121
200V 50A mos fet
ICF-SW77
31DF2
sony icf
FCF10A20
FCH10A15
FSF10A60
LM317
|
sF10A60
Abstract: C-491
Text: FAST RECOVERY DIODE GSF10A60 GSF10A60B 1 lA /600V /trr : 50nsec FSF10A60 FSF10A60B FEATURES O Similar to TO-220A C and TO-220A B Case ° Fully M olded Isolation Case F-Type ° U ltra-Fast Recovery ° Low Forw ard Voltage D rop ° Low Pow er Loss, H igh Efficiency
|
OCR Scan
|
PDF
|
/600V
50nsec
GSF10A60
GSF10A60B
FSF10A60
FSF10A60B
O-220A
SF10A
sF10A60
C-491
|
Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE GSF10A60 GSF10A60B 11A/600V/trr :50nsec FSF10A60 FSF10A60B FEATURES o Similar to TO-220AC and TO-220AB Case ° Fully Molded Isolation Case F-Type o Ultra-Fast Recovery o Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability
|
OCR Scan
|
PDF
|
GSF10A60
GSF10A60B
1A/600V/trr
50nsec
FSF10A60
FSF10A60B
O-220AC
O-220AB
|
30KF60B
Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166
|
OCR Scan
|
PDF
|
1N4001
1N4002
1N4004
1N4005
1N4006
1N4007
2VF10CT
F20CT
F30CT
F40CT
30KF60B
10EF1
NSF03A20
C25P10Q
F10P10Q
C25P40F
KSF25A120B
C10P10Q
61MQ60
c16p40f
|
motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
|
OCR Scan
|
PDF
|
1N5817
1N5818
1M5819
MBR150
MBR160
MBR190
MBR1100
11DQ03
11DQ04
motorola diode cross reference
replacement UF5402
IR 30D1
diode IR 30D1
10DF2 "cross reference"
1n4007 "direct replacement"
diode RU4A
IR 10D4
1n5818 "direct replacement"
|
