FSF10A60 Search Results

FSF10A60 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
FSF10A60	Nihon Inter Electronics	600 V, diode	Original	PDF
FSF10A60	Nihon Inter Electronics	FAST RECOVERY DIODE	Scan	PDF
FSF10A60B	Nihon Inter Electronics	FRD - Low Forward Voltage Drop	Original	PDF
FSF10A60B	Nihon Inter Electronics	600 V, diode	Original	PDF
FSF10A60B	Nihon Inter Electronics	FAST RECOVERY DIODE	Scan	PDF

FSF10A60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FSF10A60 Abstract: No abstract text available Text: FRD Type : FSF10A60 OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage	Original	FSF10A60 FSF10A60 FSF10A60/FSF10A60B	PDF
FSF10A60 Abstract: No abstract text available Text: 10A Avg. 600 Volts FRED FSF10A60B •最大定格 Maximum Ratings Item Symbol くり返しピーク逆電圧 Repetitive Peak Reverse Voltage 平均整流電流 Average Rectified Forward Current 実効順電流 R.M.S. Forward Current サ	Original	FSF10A60B FSF10A60/FSF10A60B FSF10A60	PDF
Untitled Abstract: No abstract text available Text: FRD Type : FSF10A60B OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage	Original	FSF10A60B FSF10A60B FSF10A60/FSF10A60B	PDF
Untitled Abstract: No abstract text available Text: FRD Type : FSF10A60 OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage	Original	FSF10A60 FSF10A60 FSF10A60/FSF10A60B	PDF
FSF10A60 Abstract: FSF10A60B Text: FRD Type : FSF10A60B OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage	Original	FSF10A60B FSF10A60/FSF10A60B FSF10A60 FSF10A60B	PDF
FSF10A60 Abstract: No abstract text available Text: 10A Avg. 600 Volts FRED FSF10A60 •最大定格 Maximum Ratings Item Symbol くり返しピーク逆電圧 Repetitive Peak Reverse Voltage 平均整流電流 Average Rectified Forward Current 実効順電流 R.M.S. Forward Current サ	Original	FSF10A60 FSF10A60/FSF10A60B FSF10A60	PDF
FSF10A60 Abstract: No abstract text available Text: FRD Type : FSF10A60 OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage	Original	FSF10A60 FSF10A60	PDF
FSF10A60B Abstract: No abstract text available Text: FRD Type : FSF10A60B OUTLINE DRAWING FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage	Original	FSF10A60B FSF10A60B	PDF
Untitled Abstract: No abstract text available Text: FRD Type：FSF10A60B •OUTLINE DRAWING 構造：拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧	Original	TypeFSF10A60B FSF10A60B	PDF
Untitled Abstract: No abstract text available Text: FRD Type：FSF10A60B •OUTLINE DRAWING 構造：拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧	Original	TypeFSF10A60B FSF10A60B 60/FSF10A60B FSF10A60/FSF10A60B	PDF
Untitled Abstract: No abstract text available Text: FRD Type：FSF10A60 •OUTLINE DRAWING 構造：拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧	Original	TypeFSF10A60 FSF10A60	PDF
Untitled Abstract: No abstract text available Text: FRD Type：FSF10A60 •OUTLINE DRAWING 構造：拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧	Original	TypeFSF10A60 FSF10A60 Hal60/FSF10A60B FSF10A60/FSF10A60B	PDF
diode smd ED 74 Abstract: 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR Text: 目录二极管—电磁干扰及电源的效率 —————————— 参考整流杂波 ———————————————— 有3个系列的SBD ——————————————— SBD和热失控 ————————————————	Original	O-220 O-247 O-247 aSn-37Pb bSn-37Pb diode smd ED 74 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR	PDF
30V 20A 10KHz power MOSFET Abstract: IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100 Text: 目录二极管是功率半导体的基础 1 二极管的构造标记、基本特性１一般整流二极管和高速二极管 2 确认二极管的基本特性的实验—试着测量正向特性和反向特性 2 （正向电力损耗）加上（反向电力损耗） — 使用PN二极管时我们可以	Original	AC100/ 0QY03 EP10HY03 EP10LA03 EP10QY03 OD-123 200270/W EP10HA03 30V 20A 10KHz power MOSFET IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100	PDF

pn junction diode structure Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss	Original		PDF
Untitled Abstract: No abstract text available Text: FRD Type：FSF10A60 •OUTLINE DRAWING 構造：拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧	Original	TypeFSF10A60 FSF10A60 Hal60/FSF10A60B FSF10A60/FSF10A60B	PDF
31DF2 diode Abstract: mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice Text: 트랜지스터 기술 2004년 8월호 제1장 원고 파워 다이오드의 기본 특성 및 선정 전류 다이오드는 파워 반도체의 기본 파워 전력용 반도체에 흘려보낼 수 있는 전류 는 일반적으로 1A 이상입니다. 가장 기본적인	Original	2004/Sept. AC100/ 50/60Hz DC12V 10kHz OD-123 100/W 200/W 270/W 300/W 31DF2 diode mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice	PDF
Untitled Abstract: No abstract text available Text: FRD Type：FSF10A60B •OUTLINE DRAWING 構造：拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧	Original	TypeFSF10A60B FSF10A60B 60/FSF10A60B FSF10A60/FSF10A60B	PDF
FCU20A40 Abstract: FSU05B60 Tc117 tc112 FSU05A40 FSU05A60 FSU20B60 FSU15A40 FCU20A20 FCU20B60 Text: Fast Recovery Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) IRM（mA) Tjmax 25°C (°C) 25°C trr (ns) Case Outline TO-220AC Full Pack FSF05A20 FSU05A20 FSU05A30 FSF05A40 FSU05A40 FSF05A60 FSU05A60 FSU05B60 200 200 300 400 400 600 600 600	Original	O-220AC FSF05A20 FSU05A20 FSU05A30 FSF05A40 FSU05A40 FSF05A60 FSU05A60 FSU05B60 FSF10A20 FCU20A40 FSU05B60 Tc117 tc112 FSU20B60 FSU15A40 FCU20A20 FCU20B60	PDF
EIAJ ED-4701 B-121 Abstract: 200V 50A mos fet 1N538 ICF-SW77 31DF2 sony icf FCF10A20 FCH10A15 FSF10A60 LM317 Text: 목차 다이오드 — 노이즈와 전원 효율 참고 정류 노이즈 3 시리즈 SBD SBD 와 열폭주 1 고속 다이오드란 2 FRD 와 SBD 3 응용 회로와 니혼인터 SBD/FRD 4 역회복 특성 4-1 역회복 특성의 파형 상의 정의 4-2 역회복 특성 측정 회로	Original	1N538 O-220 O-247 Sn-37Pb 1030s EIAJ ED-4701 B-121 200V 50A mos fet ICF-SW77 31DF2 sony icf FCF10A20 FCH10A15 FSF10A60 LM317	PDF
sF10A60 Abstract: C-491 Text: FAST RECOVERY DIODE GSF10A60 GSF10A60B 1 lA /600V /trr : 50nsec FSF10A60 FSF10A60B FEATURES O Similar to TO-220A C and TO-220A B Case ° Fully M olded Isolation Case F-Type ° U ltra-Fast Recovery ° Low Forw ard Voltage D rop ° Low Pow er Loss, H igh Efficiency	OCR Scan	/600V 50nsec GSF10A60 GSF10A60B FSF10A60 FSF10A60B O-220A SF10A sF10A60 C-491	PDF
Untitled Abstract: No abstract text available Text: FAST RECOVERY DIODE GSF10A60 GSF10A60B 11A/600V/trr :50nsec FSF10A60 FSF10A60B FEATURES o Similar to TO-220AC and TO-220AB Case ° Fully Molded Isolation Case F-Type o Ultra-Fast Recovery o Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability	OCR Scan	GSF10A60 GSF10A60B 1A/600V/trr 50nsec FSF10A60 FSF10A60B O-220AC O-220AB	PDF
30KF60B Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166	OCR Scan	1N4001 1N4002 1N4004 1N4005 1N4006 1N4007 2VF10CT F20CT F30CT F40CT 30KF60B 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f	PDF
motorola diode cross reference Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement" Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3	OCR Scan	1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"	PDF

FSF10A60 Search Results

FSF10A60 Datasheets (5)

FSF10A60 Datasheets Context Search

FSF10A60

FSF10A60

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FSF10A60

FSF10A60

FSF10A60

FSF10A60B

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diode smd ED 74

30V 20A 10KHz power MOSFET

pn junction diode structure

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31DF2 diode

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FCU20A40

EIAJ ED-4701 B-121

sF10A60

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30KF60B

motorola diode cross reference