1E14
Abstract: 2E12 FSF254R4 JANSR2N7407 Rad Hard in Fairchild for MOSFET TRANSISTOR 187
Text: JANSR2N7407 Data Sheet [ /Title JANS R2N74 07 /Subject (Formerly Available As FSF25 4R4, Radiation Hardened, SEGR Resistant, N-Cha nnel Power MOSFETs) /Autho r () /Keywords (FSF2 54R4, Radiation Hardened, SEGR Resistant, N-Cha Formerly Available As FSF254R4,
|
Original
|
PDF
|
JANSR2N7407
R2N74
FSF25
FSF254R4,
1E14
2E12
FSF254R4
JANSR2N7407
Rad Hard in Fairchild for MOSFET
TRANSISTOR 187
|
Untitled
Abstract: No abstract text available
Text: JANSR2N7407 Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
|
Original
|
PDF
|
JANSR2N7407
FSF254R4,
|
1E14
Abstract: 2E12 FSF254R4 JANSR2N7407
Text: JANSR2N7407 Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
|
Original
|
PDF
|
JANSR2N7407
FSF254R4,
1E14
2E12
FSF254R4
JANSR2N7407
|
Untitled
Abstract: No abstract text available
Text: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
|
Original
|
PDF
|
FSF254D,
FSF254R
|
1E14
Abstract: 2E12 FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 ic 356
Text: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
PDF
|
FSF254D,
FSF254R
1E14
2E12
FSF254D
FSF254D1
FSF254D3
FSF254R
FSF254R1
FSF254R3
ic 356
|
FSF254D
Abstract: 1E14 2E12 FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3
Text: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
PDF
|
FSF254D,
FSF254R
FSF254D
1E14
2E12
FSF254D1
FSF254D3
FSF254R
FSF254R1
FSF254R3
|
Untitled
Abstract: No abstract text available
Text: JANSR2N7407 S em iconductor Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 1998 File N um ber 4636 Features • 18A, 250V, rog oi\| = 0.170Q • Total Dose The Discrete Products Operation of Harris Semiconductor
|
OCR Scan
|
PDF
|
JANSR2N7407
FSF254R4,
1-800-4-HARRIS
|
Untitled
Abstract: No abstract text available
Text: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs e 1998 Features Description • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
|
OCR Scan
|
PDF
|
FSF254D,
FSF254R
MIL-S-19500
|
250JIS
Abstract: No abstract text available
Text: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs
|
OCR Scan
|
PDF
|
FSF254D,
FSF254R
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
250JIS
|
