FSGJ160D1

Abstract: FSGJ160R4 FSGJ160 2E12 FSGJ160R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGJ160R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

2E12

Abstract: FSGJ160D1 FSGJ160R3 FSGJ160R4 4A200
Contextual Info: FSGJ160R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds rd poon, mitor, diadd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or

Contextual Info: FSGJ160R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

2N7509

Abstract: transistor 1020 2N7510 FSGJ264 FSGJ160
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 3 January 2009. INCH-POUND MIL-PRF-19500/687B 3 October 2008 SUPERSEDING MIL-PRF-19500/687A 12 July 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND