2E12
Abstract: FSJ9055D FSJ9055D1 FSJ9055D3 FSJ9055R FSJ9055R1
Text: FSJ9055D, FSJ9055R Semiconductor 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, rDS ON = 0.029Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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PDF
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FSJ9055D,
FSJ9055R
O-254AA
MIL-S-19500
2E12
FSJ9055D
FSJ9055D1
FSJ9055D3
FSJ9055R
FSJ9055R1
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R FSJ9055D, FSJ9055R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs November 1997 Features Description • 55A, -60V, rDS ON = 0.029Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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Original
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PDF
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FSJ9055D,
FSJ9055R
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSJ9055D, FSJ9055R tfV W S Ju ly 1999 p O S S '^ fj|0 5 5 O Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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PDF
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FSJ9055D,
FSJ9055R
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSJ9055D, FSJ9055R HARRIS SEMICONDUCTOR 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, Tqs ON ~ 0.029S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSJ9055D,
FSJ9055R
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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