1E14
Abstract: 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3
Text: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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FSL23A4D,
FSL23A4R
1E14
2E12
FSL23A4D
FSL23A4D1
FSL23A4D3
FSL23A4R
FSL23A4R1
FSL23A4R3
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PDF
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1E14
Abstract: 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3 Rad Hard in Fairchild for MOSFET
Text: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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FSL23A4D,
FSL23A4R
1E14
2E12
FSL23A4D
FSL23A4D1
FSL23A4D3
FSL23A4R
FSL23A4R1
FSL23A4R3
Rad Hard in Fairchild for MOSFET
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PDF
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Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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Original
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FSL23A4D,
FSL23A4R
Rad Hard in Fairchild for MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R FSL23A4D, FSL23A4R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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Original
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FSL23A4D,
FSL23A4R
1-800-4-HARRIS
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PDF
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Untitled
Abstract: No abstract text available
Text: FSL23A4D, FSL23A4R Semiconductor 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, ros ON = 0-480S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL23A4D,
FSL23A4R
O-205AF
254mm)
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PDF
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Untitled
Abstract: No abstract text available
Text: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, rDS ON = 0.480SJ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for com mercial and m ilitary space
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OCR Scan
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FSL23A4D,
FSL23A4R
480SJ
36MeV/mg/cm2
FSL23A401
FSL23A4D3ours
MIL-STD-750,
MIL-S-19500,
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: SI! H a r r is S E M I C O N D U C T O R FSL23A4D, FSL23A4R U W U 1 * Description Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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ary1998
FSL23A4D,
FSL23A4R
1-800-4-HARRIS
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PDF
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