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    FSL9110R4 Search Results

    FSL9110R4 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSL9110R4 Fairchild Semiconductor 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET Original PDF
    FSL9110R4 Intersil 2.5A, -100V, 1.30 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSL9110R4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    FSL9110R4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sem 2105

    Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF JANSR2N7411 FSL9110R4 -100V, sem 2105 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Fairchild Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF JANSR2N7411 FSL9110R4 -100V,

    2E12

    Abstract: FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 11 /Subject (2.5A, -100V, 1.30 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 2.5A, 100V,


    Original
    PDF JANSR2N7411 FSL9110R4 -100V, R2N74 2E12 FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET

    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FSL9110D, FSL9110R Data Sheet 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original
    PDF FSL9110D, FSL9110R -100V, Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FSL9110D FSL9110D1 FSL9110D3 FSL9110R FSL9110R1
    Text: FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original
    PDF FSL9110D, FSL9110R -100V, 2E12 FSL9110D FSL9110D1 FSL9110D3 FSL9110R FSL9110R1

    2E12

    Abstract: FSL9110D FSL9110D1 FSL9110D3 FSL9110R FSL9110R1 FSL9110
    Text: FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original
    PDF FSL9110D, FSL9110R -100V, 2E12 FSL9110D FSL9110D1 FSL9110D3 FSL9110R FSL9110R1 FSL9110

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7411 GB « " E S ! Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSL9110R4 JANSR2N7411 -100V, MIL-STD-750, MIL-S-19500, 500ms;

    IC SEM 2105

    Abstract: No abstract text available
    Text: JANSR2N7411 7 ^ r”r Formerly FSL9110R4 June1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Features Description • 2.5A, -100V, ros ON = 1-30S2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


    OCR Scan
    PDF FSL9110R4 -100V, 1-30S2 JANSR2N7411 O-205AF 254mm) IC SEM 2105

    Untitled

    Abstract: No abstract text available
    Text: FSL9110D, FSL9110R CD W ^ is 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 2 .5 A ,-1 0 0 V ,rD S o N = 1-30£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSL9110D, FSL9110R -100V, MIL-STD-750, MIL-S-19500, 500ms;

    7404

    Abstract: No abstract text available
    Text: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F


    OCR Scan
    PDF JANSR2N7272 JANSR2N7275 FRL130R4 FRL230R4 FRL234R4 FRF150R FRF250R4 FSL130R4 FSL230R4 FSL234R4 7404

    Untitled

    Abstract: No abstract text available
    Text: FSL9110D, FSL9110R Semiconductor Data Sheet 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan
    PDF FSL9110D, FSL9110R -100V, 1-800-4-HARRIS