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    FSL9130R1 Search Results

    FSL9130R1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSL9130R1 Fairchild Semiconductor 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET Original PDF
    FSL9130R1 Intersil 5A, -100V, 0.680 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF

    FSL9130R1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VDMOS reliability testing report

    Abstract: Rad Hard in Fairchild for MOSFET
    Text: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		FSL9130D, FSL9130R -100V, VDMOS reliability testing report Rad Hard in Fairchild for MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, ros ON = 0.680£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSL9130D, FSL9130R -100V, 254mm) PDF

    2E12

    Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
    Text: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSL9130D, FSL9130R -100V, O-205AF 254mm) FSL9130R 2E12 FSL9130D FSL9130D1 FSL9130D3 FSL9130R1 PDF

    5a 12v regula

    Abstract: No abstract text available
    Text: FSL9130D, FSL9130R HARRIS S E M I C O N D U C T O R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • Description 5A, -100V, roS ON = 0,68012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		FSL9130D, FSL9130R -100V, MIL-S-19500, MIL-STD-750, 100ms; 500ms; 5a 12v regula PDF

    2E12

    Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
    Text: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSL9130D, FSL9130R -100V, 2E12 FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1 PDF