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    FSS23AOD1

    Abstract: No abstract text available
    Text: FSS23AOD, FSS23AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 9A, 200V, rDS ON = 0.330Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		FSS23AOD, FSS23AOR 1-800-4-HARRIS FSS23AOD1 PDF

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    Abstract: No abstract text available
    Text: FSS23AOD, FSS23A0R h a rris S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Description Features • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSS23AOD, FSS23A0R 1-800-4-HARRIS PDF