FSS9230R1 Search Results

FSS9230R1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FSS9230R1		Fairchild Semiconductor	4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET		Original	PDF
FSS9230R1		Intersil	4A, -200V, 1.60 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs		Original	PDF

FSS9230R1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ic 4081 datasheet Abstract: 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	FSS9230D, FSS9230R -200V, ic 4081 datasheet 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1
Rad Hard in Fairchild for MOSFET Abstract: 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 fairchild MOSFET reliability report Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	PDF	FSS9230D, FSS9230R -200V, Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 fairchild MOSFET reliability report
1E14 Abstract: 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	FSS9230D, FSS9230R -200V, 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1
Untitled Abstract: No abstract text available Text: FSS9230D, FSS9230R HARRIS S E M I C O N D U C T O R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Description Features • 4A, -200V, rDs ON = 1.60£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event	OCR Scan	PDF	FSS9230D, FSS9230R -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms;
data sw 3205 Abstract: No abstract text available Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, ros ON = 1 -60ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSS9230D, FSS9230R -200V, -257AA MIL-S-19500 data sw 3205