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    FSYA250R3 Search Results

    FSYA250R3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSYA250R3 Fairchild Semiconductor 27A, 200V, 0.100 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSYA250R3 Intersil 27A, 200V, 0.100 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF

    FSYA250R3 Datasheets Context Search

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    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
    Text: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSYA250D, FSYA250R Rad Hard in Fairchild for MOSFET 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3

    1E14

    Abstract: 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
    Text: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSYA250D, FSYA250R 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3

    Untitled

    Abstract: No abstract text available
    Text: FSYA250D, FSYA250R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs September 1997 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original
    PDF FSYA250D, FSYA250R 1-800-4-HARRIS

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
    Text: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original
    PDF FSYA250D, FSYA250R Rad Hard in Fairchild for MOSFET 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3

    Untitled

    Abstract: No abstract text available
    Text: FSYA250D, FSYA250R ¡fì HARRIS S E M I C O N D U C T O R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Ju ne 1 998 Features rDS C N) = 0.100S2 T h e D is c re te P ro d u c ts O p e ra tio n of H a rris S e m ic o n d u c to r h a s d eve lo pe d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s


    OCR Scan
    PDF FSYA250D, FSYA250R MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: S FSYA250D, FSYA250R Semiconductor y 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 27A, 200V, rDS 0 N = 0.100£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSYA250D, FSYA250R FSYA250R