FSYC260R3 Search Results

FSYC260R3 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FSYC260R3		Fairchild Semiconductor	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs		Original	PDF
FSYC260R3		Intersil	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs		Original	PDF

FSYC260R3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs [ /Title The Discrete Products Operation of Intersil has developed a FSYC series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	PDF	FSYC260D, FSYC260R
Untitled Abstract: No abstract text available Text: FSYC260D, FSYC260R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS ON = 0.050Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.	Original	PDF	FSYC260D, FSYC260R
1E14 Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	PDF	FSYC260D, FSYC260R 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
smd diode 46A Abstract: 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd Text: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	PDF	FSYC260D, FSYC260R smd diode 46A 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd
1E14 Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2000 • 46A, 200V, rDS ON = 0.050Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects	Original	PDF	FSYC260D, FSYC260R 36MeV/mg/cm2 MIL-PRF-19500, MIL-PRF-19500. 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
Untitled Abstract: No abstract text available Text: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs juiy 1998 Features Description • 46A, 200V, r[js ON = 0.050£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s	OCR Scan	PDF	FSYC260D, FSYC260R 36MeV/mg/cm2
Untitled Abstract: No abstract text available Text: FSYC260D, FSYC260R H A R R IS X S em iconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, Tqs ^o N = 0.050£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSYC260D, FSYC260R