FSYC9160D1 Search Results

FSYC9160D1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FSYC9160D1		Fairchild Semiconductor	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs		Original	PDF
FSYC9160D1		Intersil	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs		Original	PDF

FSYC9160D1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Rad Hard in Fairchild for MOSFET Abstract: 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Text: FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs December 2001 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically	Original	FSYC9160D, FSYC9160R -100V, Rad Hard in Fairchild for MOSFET 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1	PDF
2E12 Abstract: FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Rad hard MOSFETS in Harris Text: FSYC9160D, FSYC9160R Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	Original	FSYC9160D, FSYC9160R -100V, 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Rad hard MOSFETS in Harris	PDF
FSYC9160R Abstract: FSYC9160R1 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 Rad Hard in Fairchild for MOSFET Text: FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically	Original	FSYC9160D, FSYC9160R -100V, FSYC9160R FSYC9160R1 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 Rad Hard in Fairchild for MOSFET	PDF
2E12 Abstract: FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Text: FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically	Original	FSYC9160D, FSYC9160R -100V, 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1	PDF
Untitled Abstract: No abstract text available Text: y “ FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description . 47A, -100V, rDS 0 N = 0.053£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	FSYC9160D, FSYC9160R	PDF