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    FSYC9260D Search Results

    FSYC9260D Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSYC9260D Intersil Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSYC9260D1 Fairchild Semiconductor Radiation Hardened, SEGR Resistant, P-Channel Power MOSFET Original PDF
    FSYC9260D1 Fairchild Semiconductor Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs Original PDF

    FSYC9260D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FSYC9260D FSYC9260D1 FSYC9260D3 FSYC9260R FSYC9260R1
    Text: FSYC9260D, FSYC9260R August 1998 File Number Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC9260D, FSYC9260R -200V, 1E14 2E12 FSYC9260D FSYC9260D1 FSYC9260D3 FSYC9260R FSYC9260R1

    1E14

    Abstract: 2E12 FSYC9260D FSYC9260D1 FSYC9260D3 FSYC9260R FSYC9260R1
    Text: FSYC9260D, FSYC9260R August 1998 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs File Number 4569 Features • 28A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSYC9260D, FSYC9260R -200V, 1E14 2E12 FSYC9260D FSYC9260D1 FSYC9260D3 FSYC9260R FSYC9260R1

    1E14

    Abstract: 2E12 FSYC9260D FSYC9260D1 FSYC9260D3 FSYC9260R FSYC9260R1 Rad Hard in Fairchild for MOSFET
    Text: FSYC9260D, FSYC9260R December 2001 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC9260D, FSYC9260R -200V, 1E14 2E12 FSYC9260D FSYC9260D1 FSYC9260D3 FSYC9260R FSYC9260R1 Rad Hard in Fairchild for MOSFET

    diode smd ED 84

    Abstract: smd transistor NG
    Text: FSYC9260D, FSYC9260R Semiconductor August 1998 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs File Number 4569 Features • 2 8 A , -200V , rQg ONi = 0.130J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose


    OCR Scan     		PDF FSYC9260D, FSYC9260R 1-800-4-HARR diode smd ED 84 smd transistor NG

    Untitled

    Abstract: No abstract text available
    Text: FSYC9260D, FSYC9260R f ü H A R R IS S E M I C O N D U C T O R August 1998 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs File Number 4569 Features • 28A, -200V, ro g o i\| = 0 .1 30Q T he D iscrete P roducts O pe ra tion of H arris S e m icon ducto r


    OCR Scan     		PDF FSYC9260D, FSYC9260R 1-800-4-HARRIS