FT3055LE
Abstract: No abstract text available
Text: FT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET July 1998 Features Description • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits, gives optimum
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RFT3055LE
0-150i2
OT-223
330mm
FT3055LE
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FT3055LE
Abstract: 305SL
Text: FT3055LE in t e f s il D a ta S h e e t 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives
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OCR Scan
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PDF
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RFT3055LE
TA49158.
RFT3055LE
AN7260.
FT3055LE
305SL
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