FTD2013 Search Results

FTD2013 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FTD2013		Sanyo Semiconductor	Load switching (2 devices)		Original	PDF
FTD2013-E		Sanyo Semiconductor	Transistor Mosfet N-CH 30V 4.5A 8TSSOP		Original	PDF

FTD2013 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: FTD2013 N- Channel Silicon MOS FET DC-DC Converter TENTATIVE Features •Low ON-state resistance. •2.5V drive. unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse) Allowable power Dissipation	Original	PDF	FTD2013 1000mm 980828TM2fXHD
D2013 Abstract: FTD2013 Text: Ordering number:ENN6080A N-Channel Silicon MOSFET FTD2013 Load Switching Applications Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2013] 3.0 0.65	Original	PDF	ENN6080A FTD2013 FTD2013] D2013 FTD2013
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	PDF	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
ECH8301 Abstract: FTD2017 FSS237 SANYO Replacement list ECH8401 ECH8631 ECH8652 ECH8607 FSS131 FSS138 Text: Ordering number : E I 0 0 7 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.	Original	PDF	FTD2011 FTD2011A FSS238 FSS804 FTD2013 ECH8607 FSS239 CPH6411 FTD2017 FTD2017R ECH8301 FTD2017 FSS237 SANYO Replacement list ECH8401 ECH8631 ECH8652 ECH8607 FSS131 FSS138
2SK2437 Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process	OCR Scan	PDF	MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking