Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Power Splitter - SCN-2-15 Power Splitter Notes: • When only specification for M range given, specification applies to entire frequency range. • Operating temperature: -55°C to 100°C Storage temperature: -55°C to 100°C;
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SCN-2-15
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Power Splitter - SCN-2-22 Power Splitter Notes: • When only specification for M range given, specification applies to entire frequency range. • Operating temperature: -55°C to 100°C Storage temperature: -55°C to 100°C;
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SCN-2-22
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Untitled
Abstract: No abstract text available
Text: NE W! Surface Mount Monolithic Amplifiers 50Ω, Broadband, DC to 8 GHz LEE-19,-29,-39,-49,-59 Features • • • • frequency range, DC to 8 GHz, useable to 10 GHz up to 17.3 dBm typ. output power excellent package for heat dissipation, exposed metal bottom
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LEE-19
FG873
LEE-29
LEE-39
LEE-49
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Power Splitter - SCN-2-11 Power Splitter Notes: • When only specification for M range given, specification applies to entire frequency range. • Operating temperature: -55°C to 100°C Storage temperature: -55°C to 100°C;
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SCN-2-11
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lee -19 Monolithic amplifiers
Abstract: No abstract text available
Text: ! NEW LEE-19 • LEE-29 • LEE-39 Surface Mount Monolithic Amplifiers 50Ω, Broadband, DC to 8 GHz LEE-49 • LEE-59 Features • • • • frequency range, DC to 8 GHz, useable to 10 GHz up to 17.3 dBm typ. output power excellent package for heat dissipation, exposed metal bottom
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LEE-19
LEE-29
LEE-39
LEE-49
LEE-59
LEE-19
FG873
LEE-29
LEE-39
lee -19 Monolithic amplifiers
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LEE-29
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifiers 50Ω, Broadband, DC to 8 GHz ! NEW LEE-19 • LEE-29 • LEE-39 LEE-49 • LEE-59 Features • • • • frequency range, DC to 8 GHz, useable to 10 GHz up to 17.3 dBm typ. output power excellent package for heat dissipation, exposed metal bottom
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LEE-19
LEE-29
LEE-39
LEE-49
LEE-59
LEE-19
FG873
LEE-29
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d 7377 amplifier
Abstract: 16316 011
Text: Mini-Circuits - Specification for Amplifier - LEE-49 Amplifier print this page LEE-49 Frequency GAIN, dB Maximum Power, dBm Dynamic Range MHz VSWR Absolute Maximum Rating DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance Øjc In Out Out In CurI P DC-3 3-fu DC-3 3-fu
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LEE-49
DC-5000
d 7377 amplifier
16316 011
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - LEE-29 Amplifier print this page LEE-29 Frequency GAIN, dB Maximum Power, dBm Dynamic Range MHz VSWR Absolute Maximum Rating DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance Øjc In Out Out In CurI P DC-3 3-fu DC-3 3-fu
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LEE-29
DC-8000
Env07
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lee39
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - LEE-39 Amplifier print this page LEE-39 Frequency GAIN, dB Maximum Power, dBm Dynamic Range MHz VSWR Absolute Maximum Rating DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance Øjc In Out Out In CurI P DC-3 3-fu DC-3 3-fu
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LEE-39
DC-8000
lee39
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - LEE-59 Amplifier print this page LEE-59 Frequency GAIN, dB Maximum Power, dBm Dynamic Range MHz VSWR Absolute Maximum Rating DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance Øjc In Out Out In CurI P DC-3 3-fu DC-3 3-fu
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LEE-59
DC-5000
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - LEE-19 Amplifier print this page LEE-19 Frequency GAIN, dB Maximum Power, dBm Dynamic Range MHz VSWR Absolute Maximum Rating DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance Øjc In Out Out In CurI P DC-3 3-fu DC-3 3-fu
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LEE-19
DC-8000
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M832
Abstract: No abstract text available
Text: NE W! Surface Mount Monolithic Amplifiers 50Ω, Broadband, DC to 8 GHz LEE-19,-29,-39,-49,-59 Features • • • • frequency range, DC to 8 GHz useable to 10 GHz up to 17.7 dBm typ. output power excellent package for heat dissipation, exposed metal bottom
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LEE-19
FG873
LEE-29
LEE-39
LEE-49
LEE-59
M832
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AV4404
Abstract: AV440461 AV4424 AV442461 AV4444 AV444461 AV4504 AV4524 AV4544 AV4604
Text: AV4 FU AV4 SWITCHES ONE OF THE SMALLEST SNAP-ACTION SWITCH IN THE WORLD FEATURES TYPICAL APPLICATIONS • Superminiature type, light-weight snap action switch 2.5 .098 PC board terminal type 4.5 (0.2g .007oz) .177 • Compact visual equipment Camera, portable VCR
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007oz)
011oz)
AV4404
AV440461
AV4424
AV442461
AV4444
AV444461
AV4504
AV4524
AV4544
AV4604
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AV4404
Abstract: AV440461 AV4424 AV442461 AV4444 AV444461 AV4504 AV4524 AV4544 AV4604
Text: AV4 FU AV4 SWITCHES ONE OF THE SMALLEST SNAP-ACTION SWITCH IN THE WORLD FEATURES TYPICAL APPLICATIONS • Superminiature type, light-weight snap action switch 2.5 .098 PC board terminal type 4.5 (0.2g .007oz) .177 • Compact visual equipment Camera, portable VCR
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007oz)
011oz)
AV4404
AV440461
AV4424
AV442461
AV4444
AV444461
AV4504
AV4524
AV4544
AV4604
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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65KHz
REV010307
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IRF*125
Abstract: s4c diode IRFR IRFR020 0MFL IRFU025
Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFR020/22/24/25 IRFU020/22/24/25 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • □□1232Q 307 ■ SMGK D-PACK L ow e r R d s <o n > Im p ro ve d in du ctive r u g g e d n e s s F a s t s w itc h in g tim e s
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IRFR020/22/24/25
IRFU020/22/24/25
ib4142
IRFR020/U020
IRFR022/U022
IRFR024/U024
IRFR025/U025
IRFR020/012
IRFR024/025
IRFU020/012
IRF*125
s4c diode
IRFR
IRFR020
0MFL
IRFU025
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Collmer Semiconductor
Abstract: ESJA31-20 ESJA25-12 ESJA25-16 ESJA25-20 ESJA31-16 ESJA35-10 ESJA37-16 ESJA57-04 ESJA18
Text: 74 ' DE I 22307^2 ODOObSû 2 J T , 7~ - * 3 - o r COLLIDER SEMICONDUCTOR INC High Voltage Rectifiers RESIN, 100 NANOSECOND RECOVERY Vr r m KV lo (MA) *FSM (A) Vf (V) Tvr (usee) PKG. L. (IN) PKG. DIA. (IN) WIRE DIA. (IN) 3mm ESJA57-04 54-06 54-08 52-10 52-12
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ESJA57-04
ESJA35-10
ESJA37-16
CSD20
JL3-07
0000bfc
ESJA17-16
ESJA18-16
ESJA17-20
ESJA18-20
Collmer Semiconductor
ESJA31-20
ESJA25-12
ESJA25-16
ESJA25-20
ESJA31-16
ESJA18
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PDF
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SD-5556
Abstract: 555B 33FLR
Text: 5556.S31 ixi •.Ln d In □ CO or TIN OVER NICKEL PLATED BRASS TIN OVER COPPER PLATED BRASS M A TER IA L 3.6 . 142 (2.3) .091 (3.6) .142 (3.6) .142 (2.3) .091 (3.6) . 142 (3.6) . 142 (2.3) .091 (3.6) .142 (3.6) . 142 (2.3) .091 (3.6) . 142 (0.6) .024 (0.4)
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SD-5556"
SD-5556
555B
33FLR
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Untitled
Abstract: No abstract text available
Text: PD1 SERIES CONNECTORS 0.6mm .024" Pitch PCB-to-PCB SMT Connectors The PD1 Series connectors are 0.6mm (.024") SMT board-toboard connectors. Typically used as docking connectors in Notebook PCs and Personal Digital Assistants (PDA). GENERAL SPECIFICATIONS
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563SHR100K59CE
Abstract: No abstract text available
Text: POLYESTER FILM/FOIL CAPACITORS Non-Inductive • Extended Foil • Radial Lead C U D ö r i l v SPECIFICATIONS: Capacitance Range: 0.001 M id. to .47 Mfd. Voltage Range: 100 WVDC Capacitance Tolerance: ±10% K Standard ±5% (J) O ptional Windings: N on-Inductive
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10MHz
100MHz
563SHR100K59CE
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PDF
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Type 101 Screw Terminal Can Style
Abstract: 2272B waycom bc 7-25 10KHZ bf 204 115 bf 204 113
Text: Type 101 Screw terminal can style T h e 101 range o f prem ium grade a lu m in iu m e le c tro ly tic cap acitors is designed fo r sw itching regulators and other lo w E S R and high fre q u e n cy a p p lic a tio n s w h ic h require 2 0 0 0 hours p ro o f
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2272B.
120Hz
10KHZ
Type 101 Screw Terminal Can Style
2272B
waycom
bc 7-25
bf 204 115
bf 204 113
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DM 024
Abstract: 14S47K 32T8 DMT1D82K
Text: DMT Header Page 1 of 1 Type DMT, Polyester Film/Foil, Radial Leads» Type DMT polyester film/foil capacitors are noninductively wound and multiple dipped in moisture resistant high density epoxy resin. • High insulation resistance IR and low dissipation
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63S081
Abstract: No abstract text available
Text: £1 Advanced Micro Devices 53/63S881/A High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable iltanlum-tungsten fuses TIW guaran tee greater than 98% programming yields
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53/63S881/A
1024x8
30-ns
24-pin
600-mil
53/63S881
53/63S881A
63S081
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PDF
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NX6ABBA12A1AF
Abstract: No abstract text available
Text: NOTES: Q] REV NX SERIES CODE ORDER CHART - M etC on-2<B Daughtercard S ocket Connectors NX6ABBA12A1AF THIS CONNECTOR IS DESIGNED TO MEET THE APPLICABLE PERFORMANCE REQUIREMENTS OF IEC 61076-4-101. 2. DELETED. 3. CONNECTORS ARE END STACKABLE ON A ,07874in/2mm GRID.
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07874in/2mm
NX6ABBA12A1AF
5M-1994
064B2
NX6ABBA12A1AF
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