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    FULLY AUTOPROTECTED POWER MOSFET Search Results

    FULLY AUTOPROTECTED POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    FULLY AUTOPROTECTED POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VNP35N07-E, VNB35N07-E OMNIFET fully autoprotected Power MOSFET Datasheet - production data Description 3 3 1 The VNP35N07-E and VNB35N07-E are monolithic devices made using STMicroelectronics VIPower technology, intended for replacement of standard Power


    Original     		PDF VNP35N07-E, VNB35N07-E VNP35N07-E VNB35N07-E O-220 VNP35N07-E DocID023779

    Untitled

    Abstract: No abstract text available
    Text: VNP35N07-E OMNIFET fully autoprotected Power MOSFET Datasheet - production data Description The VNP35N07-E is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.


    Original     		PDF VNP35N07-E VNP35N07-E O-220 DocID023779

    Untitled

    Abstract: No abstract text available
    Text: VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data • Direct access to the gate of the Power MOSFET analog driving • Compatible with standard Power MOSFET 10 Description 3 1 1 D2PAK PowerSO-10


    Original     		PDF VNB35NV04-E VNP35NV04-E, VNV35NV04-E PowerSO-10 VNB35NV04-E, VNP35NV04-E VNV35NV04-E O-220 DocID023550

    Untitled

    Abstract: No abstract text available
    Text: VNP8T Omnifet II fully autoprotected Power MOSFET Datasheet - production data Description The VNP8T is a monolithic device designed in STMicroelectronics VIPower® M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications.


    Original     		PDF DocID022888

    Untitled

    Abstract: No abstract text available
    Text: VNP8T Omnifet II fully autoprotected Power MOSFET Datasheet - production data Description The VNP8T is a monolithic device designed in STMicroelectronics VIPower® M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications.


    Original     		PDF DocID022888

    Untitled

    Abstract: No abstract text available
    Text: VND5N07 OMNIFET II fully autoprotected Power MOSFET Features Max. on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp RDS (on)


    Original     		PDF VND5N07 O-252 O-251 DocID4335

    Untitled

    Abstract: No abstract text available
    Text: VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Description 3 DPAK TO-252 The VND5N07-E is a monolithic device designed using STMicroelectronics VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz


    Original     		PDF VND5N07-E O-252 VND5N07-E O-251 DocID025077

    Untitled

    Abstract: No abstract text available
    Text: VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Description 3 DPAK TO-252 The VND5N07-E is a monolithic device designed using STMicroelectronics VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz


    Original     		PDF VND5N07-E O-252 VND5N07-E O-251 DocID025077

    VNP14NV04

    Abstract: No abstract text available
    Text:  VNB14NV04 / VND14NV04 / VND14NV04-1/ VNP14NV04 / VNS14NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNB14NV04 RDS on Ilim Vclamp 3 VND14NV04 VND14NV04-1 VNP14NV04 VNS14NV04 1 35 mΩ 12 A 40 V LINEAR CURRENT LIMITATION


    Original     		PDF VNB14NV04 VND14NV04 VND14NV04-1/ VNP14NV04 VNS14NV04 VND14NV04-1

    VNW100N04

    Abstract: No abstract text available
    Text: VNW100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW100N04 42 V 0.012 Ω 100 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP


    Original     		PDF VNW100N04 O-247 O-247 VNW100N04, VNW100N04

    365R

    Abstract: VNW50N04A
    Text: VNW50N04A "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW50N04A 42 V 0.012 Ω 50 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP ■


    Original     		PDF VNW50N04A O-247 O-247 VNW50N04A, 365R VNW50N04A

    VNW50N04A

    Abstract: No abstract text available
    Text: VNW50N04A "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW50N04A 42 V 0.012 Ω 50 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP ■


    Original     		PDF VNW50N04A O-247 O-247 VNW50N04A, VNW50N04A

    VND14NV04-1-E

    Abstract: VND14NV04 VND14NV0413TR VND14NV04-E OMNIFET VND14NV04 pulse load calculation formula for single pulse VND14NV04-1 VNB14NV04 VNB14NV0413TR VNB14NV04-E
    Text: VNB14NV04, VND14NV04 VND14NV04-1 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS on Ilim Vclamp VNB14NV04 VND14NV04 VND14NV04-1 35 mΩ 12 A 40 V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp


    Original     		PDF VNB14NV04, VND14NV04 VND14NV04-1 VNB14NV04 VND14NV04, VND14NV04-1 VND14NV04-1-E VND14NV04 VND14NV0413TR VND14NV04-E OMNIFET VND14NV04 pulse load calculation formula for single pulse VNB14NV04 VNB14NV0413TR VNB14NV04-E

    VNW100N04

    Abstract: No abstract text available
    Text: VNW100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW100N04 42 V 0.012 Ω 100 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP


    Original     		PDF VNW100N04 O-247 O-247 VNW100N04, VNW100N04

    VND14NV04

    Abstract: VNB14NV04 VND14NV04-1 VNP14NV04 VNS14NV04
    Text:  VNB14NV04 / VND14NV04 / VND14NV04-1/ VNP14NV04 / VNS14NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14NV04 RDS on Ilim Vclamp 3 VND14NV04 VND14NV04-1 VNP14NV04 VNS14NV04 1 35 mΩ 12 A 40 V LINEAR CURRENT LIMITATION • THERMAL SHUT DOWN


    Original     		PDF VNB14NV04 VND14NV04 VND14NV04-1/ VNP14NV04 VNS14NV04 VNB14NV04 VND14NV04-1 VNP14NV04 VND14NV04 VND14NV04-1 VNS14NV04

    OMNIFET

    Abstract: JESD97 VNS3NV04D-E VNS3NV04TR-E
    Text: VNS3NV04D-E "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET Features RDS on TYPE VNS3NV04D-E 120 mΩ (*) Ilim Vclamp 3.5 A (*) 40 V (*) (*) Per each device • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP


    Original     		PDF VNS3NV04D-E VNS3NV04D-E 50KHz OMNIFET JESD97 VNS3NV04TR-E

    VNB49N04

    Abstract: VNP49N04FI VNV49N04
    Text: VNP49N04FI / VNB49N04 / VNV49N04 “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP49N04FI VNB49N04 VCLAMP RDS ON ILIM 42 V 20 mΩ 49 A VNV49N04 ISOWATT220 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP


    Original     		PDF VNP49N04FI VNB49N04 VNV49N04 VNB49N04 ISOWATT220 O-263 PowerSO-10TM VNP49N04FI VNV49N04

    VNA7NV04D

    Abstract: No abstract text available
    Text: VNA7NV04D  “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFETS TARGET SPECIFICATION TYPE VNA7NV04D RDS on 60 mΩ (*) Ilim 6 A (*) Vclamp 40 V (*) (*) Per each device LINEAR CURRENT LIMITATION THERMAL SHUT DOWN • SHORT CIRCUIT PROTECTIONS ■ INTEGRATED CLAMP


    Original     		PDF VNA7NV04D VNA7NV04D SO-16

    Untitled

    Abstract: No abstract text available
    Text: VND10N06 VND10N06-1 "OMNIFET" fully autoprotected Power MOSFET Features Max on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage RDS(on) 0.3Ω Ilim 10A VCLAMP 60V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection


    Original     		PDF VND10N06 VND10N06-1 O-252 O-251 VND10N06 VND10N06-1 DocID4831

    VNB49N04

    Abstract: VNP49N04FI VNV49N04
    Text: VNP49N04FI / VNB49N04 / VNV49N04 “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP49N04FI VNB49N04 VCLAMP RDS ON ILIM 42 V 20 mΩ 49 A VNV49N04 ISOWATT220 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP


    Original     		PDF VNP49N04FI VNB49N04 VNV49N04 VNB49N04 ISOWATT220 O-263 PowerSO-10TM VNP49N04FI VNV49N04

    Untitled

    Abstract: No abstract text available
    Text: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120m Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 • Linear current limitation ■ Thermal shut down ■ Short circuit protection


    Original     		PDF VNS3NV04D-E VNS3NV04D-E

    Untitled

    Abstract: No abstract text available
    Text: VNB49N04 - VNV49N04 OMNIFET: fully autoprotected Power MOSFET Features Type VNB49N04 VNV49N04 VCLAMP RDS ON ILIM 42 V 20 mΩ 49 A 10 3 1 1 TO-263(D2PAK) • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp


    Original     		PDF VNB49N04 VNV49N04 VNB49N04 O-263 PowerSO-10 VNB49N04, VNV49N04

    Untitled

    Abstract: No abstract text available
    Text: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120mΩ Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 • Linear current limitation ■ Thermal shut down ■ Short circuit protection


    Original     		PDF VNS3NV04D-E VNS3NV04D-E

    VNW50N04 equivalent

    Abstract: SGS-Thomson mosfet
    Text: f= T SGS-THOMSON ^ T # MDeBSilLiCT^OÖÜlOei VNW50N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNW50N04 . . . • . ■ . . . . Vclamp RDS on him 42 V 0.012 Q 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP


    OCR Scan     		PDF VNW50N04 VNW50N04 O-247 VNW50N04 equivalent SGS-Thomson mosfet