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    FULLY PROTECTED MESH OVERLAY MOSFET Search Results

    FULLY PROTECTED MESH OVERLAY MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCKE712BNL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 13.2 V, 3.65 A, Latch, Adjustable Over Voltage Protection, WSON10 Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation

    FULLY PROTECTED MESH OVERLAY MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P130NS04ZB

    Abstract: P130NS0 STP130NS04ZB
    Text: STP130NS04ZB STW130NS04ZB N-CHANNEL CLAMPED - 8mΩ - 80A TO-220/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE STP130NS04ZB STW130NS04ZB • ■ ■ ■ VDSS RDS on ID CLAMPED CLAMPED < 0.009 Ω


    Original     		PDF STP130NS04ZB STW130NS04ZB O-220/TO-247 P130NS04ZB P130NS0

    P130NS04ZB

    Abstract: B130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STB130NS04ZBT4 STP130NS04ZB STW130NS04ZB MOSFET IGSS 100uA STW13
    Text: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A


    Original     		PDF STP130NS04ZB STB130NS04ZB-1 STB130NS04ZB STW130NS04ZB O-220/I2/D2PAK/TO-247 STP130NS04ZB STB130NS04ZB O-247 P130NS04ZB B130NS04ZB JESD97 STB130NS04ZB-1 STB130NS04ZBT4 STW130NS04ZB MOSFET IGSS 100uA STW13

    ST T4 0560

    Abstract: P130NS04ZB ST T4 0540 to-247 to-220 STB130NS04ZB STB130NS04ZBT4 STP130NS04ZB STW130NS04ZB P130NS0
    Text: STP130NS04ZB STB130NS04ZB - STW130NS04ZB N-CHANNEL CLAMPED - 7 mΩ - 80A TO-220/D²PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET Figure 1: Package Table 1: General Features TYPE STP130NS04ZB STB130NS04ZB STW130NS04ZB • ■ ■ ■ VDSS RDS on ID CLAMPED


    Original     		PDF STP130NS04ZB STB130NS04ZB STW130NS04ZB O-220/D PAK/TO-247 STB130NS04ZB ST T4 0560 P130NS04ZB ST T4 0540 to-247 to-220 STB130NS04ZBT4 STP130NS04ZB STW130NS04ZB P130NS0

    B130NS04ZB

    Abstract: STB130NS04ZBT4 STP130NS04ZB P130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STW130NS04ZB P130NS0
    Text: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A


    Original     		PDF STP130NS04ZB STB130NS04ZB-1 STB130NS04ZB STW130NS04ZB O-220/I2/D2PAK/TO-247 STP130NS04ZB STB130NS04ZB O-247 B130NS04ZB STB130NS04ZBT4 P130NS04ZB JESD97 STB130NS04ZB-1 STW130NS04ZB P130NS0

    Untitled

    Abstract: No abstract text available
    Text: STP80NS04ZB N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA • ■ ■ ■ TYPE VDSS RDS on ID STP80NS04ZB CLAMPED <0.008 Ω 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE


    Original     		PDF STP80NS04ZB O-220

    P60NS

    Abstract: P60NS04ZB P60NS04Z JESD97 STP60NS04ZB
    Text: STP60NS04ZB N-channel clamped - 10mΩ - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET General features Type VDSS RDS on ID STP60NS04ZB Clamped < 0.015Ω 60A • 100% avalanche tested ■ Low capacitance and gate charge ■ 175 °C maximum junction temperature


    Original     		PDF STP60NS04ZB O-220 P60NS P60NS04ZB P60NS04Z JESD97 STP60NS04ZB

    Untitled

    Abstract: No abstract text available
    Text: STP62NS04Z N-CHANNEL CLAMPED 12mΩ - 40A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET ADVANCED DATA TYPE STP62NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED < 0.014 Ω 40 A (*) TYPICAL RDS(on) = 0.012 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE


    Original     		PDF STP62NS04Z O-220

    Untitled

    Abstract: No abstract text available
    Text: STP62NS04Z N-CHANNEL CLAMPED 11mΩ - 40A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TARGET DATA TYPE STP62NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED < 0.014 Ω 40 A (*) TYPICAL RDS(on) = 0.011 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE


    Original     		PDF STP62NS04Z O-220

    P75NS04Z

    Abstract: No abstract text available
    Text: STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET General features Type VDSS RDS on ID STP75NS04Z Clamped < 11mΩ 80A • Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature


    Original     		PDF STP75NS04Z O-220 P75NS04Z

    P62NS04Z

    Abstract: TO-220Fully STP62NS04Z
    Text: STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE STP62NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED < 0.015 Ω 62 A TYPICAL RDS(on) = 0.0125 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE


    Original     		PDF STP62NS04Z O-220 P62NS04Z TO-220Fully STP62NS04Z

    STP80NS04ZB

    Abstract: No abstract text available
    Text: STP80NS04ZB N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA • ■ ■ ■ TYPE VDSS RDS on ID STP80NS04ZB CLAMPED <0.008 Ω 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE


    Original     		PDF STP80NS04ZB O-220 STP80NS04ZB

    P75ns04z

    Abstract: STP75NS04Z JESD97
    Text: STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET General features Type VDSS RDS on ID STP75NS04Z Clamped < 11mΩ 80A • Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature


    Original     		PDF STP75NS04Z O-220 P75ns04z STP75NS04Z JESD97

    P62NS04Z

    Abstract: P62NS STP62NS04Z JESD97
    Text: STP62NS04Z N-channel clamped 12.5mΩ - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP62NS04Z Clamped <0.015Ω 62A • 100% avalanche tested ■ Low capacitance and gate charge ■ 175° C maximum junction temperature


    Original     		PDF STP62NS04Z O-220 P62NS04Z P62NS STP62NS04Z JESD97

    STP60NS04Z

    Abstract: No abstract text available
    Text: STP60NS04Z N-CHANNEL CLAMPED 10mΩ - 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED <0.015 Ω 60 A TYPICAL RDS(on) = 0.010 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION


    Original     		PDF STP60NS04Z O-220 STP60NS04Z

    P62NS04Z

    Abstract: STP62NS04Z JESD97 mosfet 100A ST P62N
    Text: STP62NS04Z N-channel clamped 12.5mΩ - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP62NS04Z Clamped <0.015Ω 62A • 100% avalanche tested ■ Low capacitance and gate charge ■ 175° C maximum junction temperature


    Original     		PDF STP62NS04Z O-220 P62NS04Z STP62NS04Z JESD97 mosfet 100A ST P62N

    p62ns04z

    Abstract: STP62NS04Z
    Text: STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET VDSS RDS on ID CLAMPED <0.015 Ω 62 A TYPE STP62NS04Z • ■ ■ ■ TYPICAL RDS(on) = 0.0125 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION


    Original     		PDF STP62NS04Z O-220 p62ns04z STP62NS04Z

    Untitled

    Abstract: No abstract text available
    Text: STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET VDSS RDS on ID CLAMPED <0.015 Ω 62 A TYPE STP62NS04Z • ■ ■ ■ TYPICAL RDS(on) = 0.0125 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION


    Original     		PDF STP62NS04Z O-220

    STP80NS04Z

    Abstract: No abstract text available
    Text: STP80NS04Z N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP80NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED <0.008 Ω 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION


    Original     		PDF STP80NS04Z O-220 STP80NS04Z

    STP62NS04Z

    Abstract: SC12470 p62ns04z st mosfet st 393 st marking code
    Text: STP62NS04Z N-channel clamped 12.5 mΩ, 62 A, TO-220 fully protected MESH OVERLAY Power MOSFET Features • Type VDSS RDS on max ID STP62NS04Z Clamped < 0.015 Ω 62 A 3 100% avalanche tested 1 ■ Low capacitance and gate charge ■ 175 °C maximum junction temperature


    Original     		PDF STP62NS04Z O-220 STP62NS04Z SC12470 p62ns04z st mosfet st 393 st marking code

    STP60NS04Z

    Abstract: TO-220Fully
    Text: STP60NS04Z  N - CHANNEL CLAMPED 10mΩ - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE STP60NS04Z • ■ ■ ■ V DSS R DS on CLAMPED <0.015 Ω ID 60 A TYPICAL RDS(on) = 0.010 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE


    Original     		PDF STP60NS04Z O-220 STP60NS04Z TO-220Fully

    Untitled

    Abstract: No abstract text available
    Text: STP60NS04Z N-CHANNEL CLAMPED 10mΩ - 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60NS04Z • ■ ■ ■ V DSS R DS on ID CLAMPED <0.015 Ω 60 A TYPICAL RDS(on) = 0.010 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION


    Original     		PDF O-220 STP60NS04Z O-220

    STP80NS04Z

    Abstract: No abstract text available
    Text: STP80NS04Z N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP80NS04Z • ■ ■ ■ V DSS R DS on ID CLAMPED <0.008 Ω 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION


    Original     		PDF O-220 STP80NS04Z O-220 STP80NS04Z

    Untitled

    Abstract: No abstract text available
    Text: STP60NS04Z N - CHANNEL CLAMPED 10m ^ - 60A - T0-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE STP60N S04Z V dss R dS oii Id CLAM PED < 0 .0 1 5 Q. 60 A . . TYPICAL RDS(on) =0.010 £2 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE


    OCR Scan     		PDF STP60NS04Z T0-220 STP60N

    Untitled

    Abstract: No abstract text available
    Text: STP80NS04Z N - CHANNEL CLAMPED 7.5mG - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP 80N S04Z V dss R d S o ii Id CLAM PED <0.008 Q. 80 A . TYPICAL RDs(on) = 0.0075 £2 . 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE . 175 °C MAXIMUM JUNCTION


    OCR Scan     		PDF STP80NS04Z O-220