Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FX35V0510 1 0 .5 — 1 1.0GHz BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 5 V 0 5 1 0 is an internally impedance matched GaAs power F E T especially designed fo r use in 10.5 ~ 11.0 G H z band amplifiers. The herm etically sealed metal-ceramic
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FX35V0510
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Untitled
Abstract: No abstract text available
Text: bEHTBST □Dl601fi fi3D • MITSUBISHI SEMICONDUCTOR <GaAs FET> M FX35V0005 1 0 .0 — 10.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FX35V 0005 is an internally impedance matched GaAs power FET especially designed for use in 10.0 ~ 10.5
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Dl601f
GFX35V0005
FX35V
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Untitled
Abstract: No abstract text available
Text: b 5 4 cìfia ì O D l ô O l b Tbfi • MITSUBISHI SEMICONDUCTOR <GaAs FET> M FX35V9500 9.5~ 10.0G Hz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FX35V 9500 is an internally impedance matched GaAs power FET especially designed for use in 9.5 ~ 10.0
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GFX35V9500
FX35V
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FX35V0005 1 0 .0 — 10.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G FX 35V 0005 is an internally impedance matched GaAs power FET especially designed for use in 10.0 ~ 10.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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FX35V0005
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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MGF1102
MGF1302
MGF1303B
MGFI323
MGF1402B
MGFI412B
MGF1403B
MGF1423B
MGFI425B
MGFI902B
MGF1200
MGF4310
MGF1100
MGF1412
MGF4301
MGF1304
MGF7003
MGF4305A
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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mgfx35v0510
Abstract: FX35V0510-51 MGFX35V0005
Text: ^M ITSUBISHI FX35VXXXX Packaged ELECTRONIC DEVICE GROUP DESCRIPTION • Internally matched to 50Q • High output power PldB = 3.5W (TYP) This family of devices use high performance source island via-hole GaAs die which offer excellent electrical and thermal resistance
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MGFX35VXXXX
MGFX35VXXXX
MGFX35V9095
MGFX35V9500
MGFX35V0005
MGFX35V0510
MGFX35V1722
MGFX35V9095-01
MGFX35V9095-51
MGFX35V9500-01
FX35V0510-51
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X35V
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F X 35V 1 7 2 2 11.7 ~ 12.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F X 3 5 V 1 7 2 2 is an internally impedance matched GaAs power F E T especially designed fo r use in 11.7 ~ 12.2
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