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    FY21 Search Results

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    FY21 Price and Stock

    E-T-A 3120-F501-N7Q1-W15FY2-16A

    CIR BRKR THRM 16A 250VAC 50VDC
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    DigiKey 3120-F501-N7Q1-W15FY2-16A Bulk
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    E-T-A 3120-N501-N7Q1-W15FY2-16A

    MIN ORD QTY 10. THE 3120-N THERM
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    DigiKey 3120-N501-N7Q1-W15FY2-16A Bulk 10
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    Mouser Electronics 3120-N501-N7Q1-W15FY2-16A 7
    • 1 $41.39
    • 10 $30.63
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    RS 3120-N501-N7Q1-W15FY2-16A Bulk 6 Weeks 10
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    Master Electronics 3120-N501-N7Q1-W15FY2-16A 73
    • 1 $26.08
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    Sager 3120-N501-N7Q1-W15FY2-16A 10
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    • 10 $31.58
    • 100 $25.47
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    E-T-A 3120-N311-P7T1-W15FY2-15A

    CIR BRKR THERM SWITCH 1P
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    DigiKey 3120-N311-P7T1-W15FY2-15A Bulk 10
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    Mouser Electronics 3120-N311-P7T1-W15FY2-15A
    • 1 $31.08
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    RS 3120-N311-P7T1-W15FY2-15A Bulk 6 Weeks 10
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    Sager 3120-N311-P7T1-W15FY2-15A 10
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    • 10 $29.32
    • 100 $23.65
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    E-T-A 3120-F311-P7T1-W15FY2-15A

    CIR BRKR THRM 15A 250VAC 50VDC
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    Glenair Inc 318FY213NF1607

    Circular MIL Spec Backshells ACCESSORIES - SHRINK BOOT ADAPTERS
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    Mouser Electronics 318FY213NF1607
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    Newark 318FY213NF1607 Bulk 51 1
    • 1 $1363.54
    • 10 $849.91
    • 100 $369.53
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    FY21 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FX222

    Abstract: FX223
    Text: 2 MEG x 16 PAGE FLASH MEMORY FLASH MEMORY MT28F321P2FG Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa – Read bank a during erase bank b and vice versa


    Original
    100ns 110ns 100ns/110ns 35ns/45ns. MT28F321P2FG FX222 FX223 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 2 MEG x 16 PAGE FLASH MEMORY FLASH MEMORY MT28F321P2FG Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa


    Original
    100ns 110ns 100ns/110ns 35ns/45ns MT28F321P2FG PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 2 MEG x 16 PAGE FLASH MEMORY FLASH MEMORY MT28F321P2FG Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa


    Original
    100ns 110ns 100ns/110ns MT28F321P2FG PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 2 MEG x 16 PAGE FLASH MEMORY FLASH MEMORY MT28F321P2FG Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa


    Original
    100ns 110ns 100ns/110ns 35ns/45ns MT28F321P2FG PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 MEG x 16 PAGE FLASH MEMORY FLASH MEMORY MT28F321P2FG Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa – Read bank a during erase bank b and vice versa


    Original
    MT28F321P2FG 100ns 110ns MT28F321P2FG PDF

    DFY2R

    Abstract: dfy21r
    Text: m u R n ta C E R A M IC M IC R O W A V E FILTERS D U P LE X E R S -D P TY P E fivw atar m Elcrtwucs DFY Series P A R T N U M B E R IN G SY S TE M FE A TU R ES • Low loss designs by use of high Q value dielectric material ■ Small size by use of high dielectric


    OCR Scan
    DFY2R815CR860BHA DFY2R820CR950KHB 942BH PDC1500 DFY21R FY21R 0FY21R 64BTC S1800 DFY2R PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan
    1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    BF 256

    Abstract: BF256 BF266 A5169 BF256C BF256B F256C f733 A5168 BF56
    Text: ¿si 1 asc t> m aaastos ooq44?g s bisieû v T^-zhJS’ N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF 04470 BF 256 A BF 256 B ' ~o-BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package


    OCR Scan
    00Q447G Q68000-A5168 Q62702-F413 Q68000-A5169 Q62702-F733 BF 256 BF256 BF266 A5169 BF256C BF256B F256C f733 A5168 BF56 PDF

    A5169

    Abstract: BF256 BF256C BF 256 BF256B BF256A
    Text: asc D • fl235bG5 GÜ0MM7Ü 5 H S I E 6 N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF .04470 ' "d " T-Z/-JS’ BF 256 A BF 256 B BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF applications.


    OCR Scan
    fl235bG5 8000-A Q62702-F413 68000-A5169 Q62702-F733 23SbOS QGQ4472 A5169 BF256 BF256C BF 256 BF256B BF256A PDF

    BF256

    Abstract: BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C
    Text: 2SC D • S23SbOS Q Q tm tiH T « S I E Ö N-Channel Junction Field-Effect Transistors 25C 04-464SIEMENS AKTIENGESELLSCHAF D BF 246 A B F246B B F246C BF 24 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF amplifiers.


    OCR Scan
    023SbOS BF246B BF246C Q62702-F219 Q62702-F393 Q62702-F254 Q62702-F250 127mm BF256A BF2S68 BF256 BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C PDF

    F245C

    Abstract: F245A BC 245 C bf245 BF 245 2bf245 BF 245 B Siemens transistors rf C 245 b bf245c
    Text: 25C D • fl535b05 Q0Q4MS7 2 « S I E Û T - K BF 245 A BF 245 B "BF 245 C N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF 57 - l ï D - BF 245 A, B, and C are N-channel junction field-effect transistors in plastic package similar


    OCR Scan
    fl535b05 62702-F236 Q62702-F209 Q62702-F182 62702-F205 Q00MMb3 F245A F245C F245C BC 245 C bf245 BF 245 2bf245 BF 245 B Siemens transistors rf C 245 b bf245c PDF

    BF245

    Abstract: BF 245 2SC 1885 transistor BF 509 Q62702-F236 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205
    Text: 2SC D • A23SbOS Q0Q44S7 2 « S I E G T-St-Z^ . N-Channel Junction Field-Effect Transistors BF 245 A BF 245 B o - BF245C SIEMENS AKTIEN6ESELLSCHAF 57 BF 24 5 A, B, and C are N-channel junction field-effect transistors in plastic package similar


    OCR Scan
    S23SbQS Q0044S7 o-BF245C Q62702-F236 Q62702-F209 Q62702-F182 Q62702-F205 BF245A AKTIEN6ESELLSCHAF-BF245C 103MHz BF245 BF 245 2SC 1885 transistor BF 509 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205 PDF