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    smd transistor bq

    Abstract: A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150
    Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		PDF MT28F1284W18 56-Ball 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 smd transistor bq A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150

    MT28F1284W18

    Abstract: smd codes marking A21 FY618
    Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for fast PROGRAM


    Original     		PDF MT28F1284W18 56-Ball 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 smd codes marking A21 FY618

    SMD MARKING CODE AADV

    Abstract: marking SR5 SMD MT28F1284W18 AADV
    Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for in-factory PROGRAM operation


    Original     		PDF MT28F1284W18 56-Ball 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 SMD MARKING CODE AADV marking SR5 SMD AADV