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    Abstract: LB250M LB250
    Text: SOT223 NPN SILICON PLANAR M EDIU M POWER HIGH GAIN TRANSISTOR IS S U E 3 • O C T O B ER 1995_ FEATURES * * Extremely low equivalent on resistance; RcEisat 83m!2 at 3A Gain of 400 at lc=3 A m p s and very low saturation voltage


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    PDF OT223 FZT688B FZT7888 300ns. FZT688B fzt7888 LB250M LB250