"MOSFET Module"
Abstract: QJS0512001 N mosfet 400v 500A 500a mosfet MOSFET 20V 120A STY60NM50
Text: QJS0512001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com A F Single MOSFET Module 120 Amperes/500 Volts T (DEEP) D 6 7 N (3 TYP.) R 3 2 G H 5 1 M (2 TYP.) 4 E B K (3 TYP.) H S Q 0.11 x 0.03TAB C Description: Powerex Single MOSFET Module
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QJS0512001
Amperes/500
03TAB
"MOSFET Module"
QJS0512001
N mosfet 400v 500A
500a mosfet
MOSFET 20V 120A
STY60NM50
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Untitled
Abstract: No abstract text available
Text: QJS0512001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com A F Single MOSFET Module 120 Amperes/500 Volts T (DEEP) D 6 7 N (3 TYP.) R 4 1 M (2 TYP.) 3 2 G H 5 E B K (3 TYP.) H S Q 0.11 x 0.03TAB C Description: Powerex Single MOSFET Module
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QJS0512001
Amperes/500
03TAB
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sot 227b diode fast
Abstract: No abstract text available
Text: Advanced Technical Information IGBT with Diode VCES = 300 V IC25 = 120 A VCE sat = 2.4 V IXGN 80N30BD1 C G E E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 A VGES Continuous ±20 V VGEM Transient
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80N30BD1
OT-227B,
sot 227b diode fast
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VJ7079
Abstract: VJ7119
Text: PRODUCT SHEET V I S H A Y I N T E R T E C H N O L O G Y, I N C . CAPACITORS Model RuGGed Chip VJ Series RuGGed Chip Capacitors New RuGGed Capacitors for Power Supply Applications FEATURES • Rugged, surface-mountable, multilayer ceramic capacitors • At 120 Hz, ESR of 100 V rated RuGGed Chip is typicaly less than a quarter
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100kHz
22-Oct-02
VJ7079
VJ7668
VJ7921
VJ7121
VJ7948
VJ7119
VJ7133
VMN-PT9060-0210
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Project Report of fire alarm using IC 555 doc
Abstract: Project Report of fire alarm using IC 555 toshiba laptop battery pack pinout hp laptop battery pack pinout Project Report for fire alarm using IC 555 doc Project Report of fire alarm using IC timer ne 555 TMS320C5409 automatic heat detector project report smoke alarm using IC NE 555 hp laptop battery pinout
Text: T H E W O R L D L E A D E R I N D S P inside A N A L O G A N D FEBRUARY 2001 VOLUME 7 TM point DSPs E R 160 MHz CONSUM P 50% ON DSP DSPTMS320C5410A MHz TI Analog Applications Journal 60% 120 POW Nov. update Improved fixed- N E Back cover R RMA FO C Strategic
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TMS320C5410A
TMS320C5409A
TMS320C5000
w/244
Project Report of fire alarm using IC 555 doc
Project Report of fire alarm using IC 555
toshiba laptop battery pack pinout
hp laptop battery pack pinout
Project Report for fire alarm using IC 555 doc
Project Report of fire alarm using IC timer ne 555
TMS320C5409
automatic heat detector project report
smoke alarm using IC NE 555
hp laptop battery pinout
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IRF150CF
Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152
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BUZ349
SFN152
YTFP152
YTF152
IRFP152
RFH35Nl0
RFK35Nl0
PB125N60HM
PB125N60HP
IRF150CF
GENTRON
2SK747A
EUM159M
2SK798
EFM159M179
YTFP150
2SK747
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarTM High Speed IXGK 210N30PCT1 IGBT + PolarTM MOSFET VCES = 300 V = 210 A IC25 VCE sat ≤ 1.6 V C in Parallel For PDP Applications G E Maximum Ratings Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VGES Continuous
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210N30PCT1
O-264
IXGK210N30PCT1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarTM High Speed IXGK 210N30PBT1 IGBT + PolarTM MOSFET in Parallel VCES = 300 V = 210 A IC25 VCE sat ≤ 1.6 V C For PDP Applications G E Maximum Ratings Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VGES Continuous
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210N30PBT1
O-264
IXGK210N30PBT1
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015N04L
Abstract: IPB015N04L IPB015N04L G JESD22
Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level
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IPB015N04L
PG-TO263-3
015N04L
015N04L
IPB015N04L G
JESD22
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IEC61249-2-21
Abstract: IPB015N04L JESD22 V8002
Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level
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IPB015N04L
PG-TO263-3
IEC61249-2-21
015N04L
IEC61249-2-21
JESD22
V8002
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Untitled
Abstract: No abstract text available
Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level
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IPB015N04L
PG-TO263-3
015N04L
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er T e c h n o lo g y ^ ^ ARF449A 150V 150W RF POWER MOSFETs N -C H A NN EL ENHANCEMENT MODE 120MHz The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
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ARF449A
120MHz
ARF449A
ARF449B
ARF449Aes)
ARF446
ARF447
F-33700
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DS16A
Abstract: No abstract text available
Text: Æ lltro n PRODUCT D EV I C ES , I NC . 200V. ABSOLUTE MAXIMUM RATINGS PARAMETER U N IT S SYMBOL DRAIN-SOURCE VOLTAGE VDSS 200 Vdc DRAIN-GATE VOLTAGE R g g - 1 . OMn VDGR 200 Vdc VGS ±20 Vdc ID 120 Ade DRAIN CURRENT PULSED 1DM 480 A TOTAL POWER D IS S IP A TIO N
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SDF120NA20
DS16A
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PDF
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34984
Abstract: Si9105
Text: T em ic SÌ9105 Siliconix 1-W High-Voltage Switchmode Regulator Features • C C IT T C o m p a tib le • C u rren t-M o d e C o n tro l • L ow P ow er C o n su m p tio n less th a n 5 raW • • • • • 10- t o 120-V In p u t R an g e 200-V, 2 5 0 -m A M G S F E T
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10-to
250-mAMOSFET
Si9105
9105DJ
1N5819
1N4148
P-34984â
25M735
34984
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Untitled
Abstract: No abstract text available
Text: ^ ADVANCED PO W ER Te c h n o l o g y # RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE 150V ARF449A * ARF449B Common Source 150W 120MHz The ARF449A and ARF449B comprise asym m etric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
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ARF449A
ARF449B
120MHz
ARF449A
ARF449B
F449A/449
F-33700
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Si9979
Abstract: brake mosfet switch BLDC Motor intemallow SI9979CS SQFP-48
Text: T e m ic SÌ9979CS_ « x 3-Phase Brushless DC Motor Controller Features • H all-E ffect C o m m u ta tio n • 6 0 ° o r 120° S en so r Spacing • In te g ral H igh-S ide D riv e f o r all N -C h an n el M O S F E T B ridges
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9979cs_
Si9979CS
Si9979
P-34651â
25473S
9979cs
p-34651
03/25y94)
brake mosfet switch BLDC Motor
intemallow
SQFP-48
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33362/D MOTOROLA High V oltage Sw itching Regulator T he M C 3 33 62 is a m on olithic high vo lta g e sw itch ing re g ulator th a t is spe cifica lly d e sig ned to o p era te from a rectified 120 VAC line source. This in te gra te d circu it fea tu res an o n -c h ip 500 V /2.0 A S e n se F E T po w e r sw itch,
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MC33362/D
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33362/D M O TO R O LA High V oltage Sw itching Regulator T he M C 3 33 62 is a m on olithic high vo lta g e sw itch ing re g ulator th a t is spe cifica lly desig ned to o p era te from a rectified 120 VAC line source. This integrated circu it fe a tu re s an o n -c h ip 500 V /2.0 A S e n se F E T po w e r sw itch,
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MC33362/D
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n22K
Abstract: t3.15a 250v L5991A 07l v3 L5991 BCD60II
Text: L5991 L5991A PRIMARY CONTROLLER WITH STANDBY • ■ ■ ■ ■ ■ ■ ■ . ■ ■ ■ ■ . . C U R R E N T -M O D E C O N TR O L PW M SW ITC H IN G F R E Q U E N C Y UP TO 1 M Hz LOW STA R T-U P C U R R E N T < 120|xA H IG H -C U R R EN T O U TP U T D R IVE SUITABLE
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L5991
L5991A
100ns
DIP16ANDS016
BCD60II
MULTIPOW23
006inch)
n22K
t3.15a 250v
L5991A
07l v3
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irfd121
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IR FD 120 IRFD121 IRFD122 IRFD123 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode S ilicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS{on = 0 3 0 H M 100 VOLTS
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IRFD121
IRFD122
IRFD123
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PDF
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t1002
Abstract: Pulse T1002 PWR-SMP120BNC si908 Scans-002257
Text: PWR-SMP120 PWM Power Supply IC 120 VAC Input Isolated, Regulated DC Output | POWER INTEGRATIONS, INC. Product Highlights Integrated Power Switch and CMOS Controller • O u tp u t p o w e r u p to 2 0 W fro m re c tifie d 12 0 V A C in p u t • In te g ra te d so lu tio n m in im ize s o v e ra ll size
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PWR-SMP120
t1002
Pulse T1002
PWR-SMP120BNC
si908
Scans-002257
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PDF
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n Absolute Maximum Ratings Symbol Conditions Values v Vos V dgr Id V V A A A V W °C V 200 200 120 87 360 ±20 500 55 . .+150 2 500 C la ss F 55/150/56 R g s = 20 k£i Tease —25 °C Tcase - 85 °C Id m V gs Pd Tj, Tstg Visol humidity climate Units
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M120B25:
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2N15
Abstract: RFL1N12 RFL1N15 RFP2N12 RFP2N15 RFP-zn rfp1n12
Text: G E SOLID STATE ' DE I3Û7SGA1 GDlfllOl M T □! 0! § SOLID STATE Standard Power MOSFETs " 01E .18101 d T ' 3 ? “0 9 RFL1N12, RFL1N15, RFP2N12, RFP2N15 File Number 1444 N-Channel Enhancement-Mode
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d7z39
RFL1N12,
RFL1N15,
RFP2N12,
RFP2N15
RFL1N12
RFL1N15
RFL1N15
RFP2N12
2N15
RFP2N15
RFP-zn
rfp1n12
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F10N12L
Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)
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RFM10N12L,
RFM10N15L,
RFP10N12L,
RFP10N15L
92CS-3374I
RFM10N12L
RFM10N15L
RFP10N12L
RFP10N15L*
F10N12L
F10N15L
10N15L
F10N12
RFP10N15L
F10N15
10n15
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