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    Abstract: No abstract text available
    Text: SSP7N80A Advanced Power MOSFET FEATURES B V DSS - 800 V • Avalanche Rugged Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. Low RDS(ON) ^DS(on) = 1.8 a < h- Rugged Gate Oxide Technology


    OCR Scan     		PDF SSP7N80A O-220 G04G4S4 003b32fl 00M1N 7Tb4142 DD3b33D