Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551WT1G G1 3000/Tape&Reel LMBT5551WT3G G1 10000/Tape&Reel LMBT5551WT1G 3 1 2 MAXIMUM RATINGS Rating
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LMBT5551WT1G
3000/Tape
LMBT5551WT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel
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LMBT5551DW1T1G
3000/Tape
LMBT5551DW1T3G
10000/Tape
OT-363/SC-88
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diode marking H2
Abstract: Marking H2 transistor mark code t1 COLOR marking codes marking code capacitors marking code k1 marking .H2 fuse MARKING CODE f2 marking code e2 marking code L2
Text: ACCU-GUARD FUSE MARKING CODES F1206A marking by special order only Code Current (A) C1 0.2 F1 0.25 G1 0.375 H1 0.50 K1 0.75 11 1.00 P1 1.25 L1 1.50 T1 1.75 21 2.00 V2 2.50 32 3.00 ⇒ Marking location : white side F0805B (all production is marked) Code
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F1206A
F0805B
F1206B
F0612D
F0603C
F0402E
F0603E
diode marking H2
Marking H2
transistor mark code t1
COLOR marking codes
marking code capacitors
marking code k1
marking .H2
fuse MARKING CODE f2
marking code e2
marking code L2
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Untitled
Abstract: No abstract text available
Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 S1 S2 1206-8 ChipFETr 1 S1 D1 G1 G1 D1 G2 S2 D2 Marking Code
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Si5933DC
Si5933DC-T1
Si5933DC-T1--E3
S-40932--Rev.
17-May-04
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Si5975DC
Abstract: Si5975DC-T1
Text: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5975DC
Si5975DC-T1
S-21251--Rev.
05-Aug-02
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Untitled
Abstract: No abstract text available
Text: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5975DC
Si5975DC-T1
08-Apr-05
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Si5903DC
Abstract: Si5903DC-T1
Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.155 @ VGS = -4.5 V 2.9 0.180 @ VGS = -3.6 V 2.7 0.260 @ VGS = -2.5 V 2.2 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5903DC
Si5903DC-T1
08-Apr-05
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Si5905DC
Abstract: Si5905DC-T1
Text: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5905DC
Si5905DC-T1
18-Jul-08
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Vishay DaTE CODE 1206-8
Abstract: No abstract text available
Text: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability
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Si5904DC
S-61855--Rev.
04-Oct-99
Vishay DaTE CODE 1206-8
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Si5975DC
Abstract: Si5975DC-T1
Text: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5975DC
Si5975DC-T1
18-Jul-08
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Si5905DC
Abstract: Si5905DC-T1 MARKING CODE DB
Text: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5905DC
Si5905DC-T1
S-21251--Rev.
05-Aug-02
MARKING CODE DB
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Si5904DC
Abstract: No abstract text available
Text: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability
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Si5904DC
S-61855--Rev.
04-Oct-99
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ChipFET
Abstract: Si5933DC Si5933DC-T1
Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.110 @ VGS = -4.5 V -3.6 -20 0.160 @ VGS = -2.5 V -3.0 0.240 @ VGS = -1.8 V -2.4 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5933DC
Si5933DC-T1
S-21251--Rev.
05-Aug-02
ChipFET
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Si5903DC
Abstract: Si5903DC-T1
Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.155 @ VGS = -4.5 V 2.9 0.180 @ VGS = -3.6 V 2.7 0.260 @ VGS = -2.5 V 2.2 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5903DC
Si5903DC-T1
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5905DC
Si5905DC-T1
08-Apr-05
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Si5902DC
Abstract: Si5902DC-T1
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
Si5902DC-T1
18-Jul-08
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Si5902DC
Abstract: No abstract text available
Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
S-62424--Rev.
04-Oct-99
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ChipFET
Abstract: Si5904DC Si5904DC-T1
Text: Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability and Date Code
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Si5904DC
Si5904DC-T1
S-21251--Rev.
05-Aug-02
ChipFET
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Untitled
Abstract: No abstract text available
Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
S-62424--Rev.
04-Oct-99
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Si5902DC
Abstract: Si5902DC-T1 marking code ca
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
Si5902DC-T1
S-21251--Rev.
05-Aug-02
marking code ca
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vishay MOSFET code marking
Abstract: No abstract text available
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
Si5902DC-T1
08-Apr-05
vishay MOSFET code marking
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1012S
Abstract: Q62702-F1627 BF1012S
Text: BF 1012S Silicon N-Channel MOSFET Tetrode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs 1=S Q62702-F1627 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol
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1012S
Q62702-F1627
OT-143
Jul-29-1996
1012S
Q62702-F1627
BF1012S
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Untitled
Abstract: No abstract text available
Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5
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MMBT5550
MMBT5551
MMBTA42
MMBT6517
MMBT5400
MMBT5401
MMBTA92
MMBT6520
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Untitled
Abstract: No abstract text available
Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5
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MMBT5550
MMBT5551
MMBTA42
MMBT6517
MMBT5400
MMBT5401
MMBTA92
MMBT6520
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