marking G1 sot-23
Abstract: MMBT5401 MMBT5551 MARKING G1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1
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OT-23
MMBT5551
OT-23
MMBT5401
100MHz
MMBT5551
marking G1 sot-23
MMBT5401
MARKING G1
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MMBT5551A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION
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MMBT5551
OT-23
MMBT5551L
MMBT5551-AE3-R
MMBT5551L-AE3-R
OT-23
QW-R206-010
MMBT5551A
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marking G1 sot23 UTC
Abstract: No abstract text available
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT5551
OT-23
QW-R206-010,
marking G1 sot23 UTC
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sot23 g1
Abstract: MMBT5551
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS 3 *Telephone switching circuit *Amplifier MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT5551
OT-23
QW-R206-010
sot23 g1
MMBT5551
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT–23 FEATURES z Complementary to MMBT5401 z Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBT5551
MMBT5401
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mark G1 SOT-23
Abstract: 2N5551 g1 2N5551 KST5551
Text: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 Mark: G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KST5551
350mW
OT-23
2N5551
mark G1 SOT-23
2N5551 g1
KST5551
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BFS20
Abstract: No abstract text available
Text: BFS20 SMALL SIGNAL NPN TRANSISTOR • ■ ■ Type Marking BFS20 G1 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS COMMON EMITTER IF AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
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BFS20
OT-23
BFS20
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marking G1
Abstract: No abstract text available
Text: MMBT5551 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters)
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MMBT5551
OT-23
MMBT5401
100MHz
marking G1
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smd transistor g1
Abstract: g1 smd transistor smd transistor 3K resistor smd 103 D4001BC OPTOCOUPLER SMPS smd transistor S1 SMD resistors 2012 Zener diode 18V SOD80 transistor SMD 104
Text: www.fairchildsemi.com FEB219-001 User’s Guide FPP06R001 Evaluation Board Featured Fairchild Product: FPP06R001 www.fairchildsemi.com/FEBsupport 2008 Fairchild Semiconductor Corporation 1 FEBxxx_ FPP06R001 • Rev. 0.0.1 www.fairchildsemi.com Table of Contents
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FEB219-001
FPP06R001
smd transistor g1
g1 smd transistor
smd transistor 3K
resistor smd 103
D4001BC
OPTOCOUPLER SMPS
smd transistor S1
SMD resistors 2012
Zener diode 18V SOD80
transistor SMD 104
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel
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LMBT5551DW1T1G
3000/Tape
LMBT5551DW1T3G
10000/Tape
OT-363/SC-88
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT5551LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM: 0.6
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OT-23
MMBT5551LT1
MMBT5551LT1
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 BFS20 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM : 0.025 A
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OT-23
BFS20
100MHz
037TPY
950TPY
550REF
022REF
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ic 556 datasheet
Abstract: sot-23 Marking M1F MMBT5550LT1 MMBT5551LT1 WMBT5551LT1 mmbt5550
Text: WMBT5551LT1 COLLECTOR 3 NPN Silicon Transistor 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 160 Vdc Collector – Emitter Voltage VCEO Collector – Base Voltage VCBO 180 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current — Continuous
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WMBT5551LT1
236AB)
ic 556 datasheet
sot-23 Marking M1F
MMBT5550LT1
MMBT5551LT1
WMBT5551LT1
mmbt5550
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AT-41411-TR1G
Abstract: 414x SOT-143 MARKING 550 AT-41411 S21E chip die npn transistor
Text: AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Description Avago’s AT-41411 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT‑41411 is housed in a low cost low parasitic 4 lead
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AT-41411
AT-41411
AT41411
OT-143
OT143
5989-2646EN
AV02-0797EN
AT-41411-TR1G
414x
SOT-143 MARKING 550
S21E
chip die npn transistor
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1n914 SOD123
Abstract: sot-23 MARKING CODE G1 Sc59
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 140 Vdc Collector – Base Voltage
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MMBT5550LT1
MMBT5551LT1*
236AB)
22NOT
1n914 SOD123
sot-23 MARKING CODE G1
Sc59
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ULN2803 driver
Abstract: ULN2803 uln2804 equivalent ULN2804A
Text: ULN2803 ULN2804 Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage
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ULN2803
ULN2804
ULN2804
ULN2803 driver
uln2804 equivalent
ULN2804A
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Wavetek 395
Abstract: J280 MC13156F 143-18J12 hp3780A Wavetek 164 MPS901 toko transformer IF 455 khz colpitts oscillator vhf
Text: MC13156 Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar process. The MC13156 has an onboard grounded collector VCO transistor
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MC13156
Wavetek 395
J280
MC13156F
143-18J12
hp3780A
Wavetek 164
MPS901
toko transformer IF 455 khz
colpitts oscillator vhf
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lm 4572 SMD 8 PIN
Abstract: 2904 SMD IC SMD TRANSISTOR H2A NPN smd transistor h2a SMD H2A motorola smd transistor code 935 smd code H2A 0011 TRANSISTOR transistor smd H2A h2a smd
Text: MC13142 Product Preview Low Power DC - 1.8 GHz LNA, Mixer and VCO LOW POWER DC – 1.8 GHz LNA, MIXER and VCO The MC13142 is intended to be used as a first amplifier, voltage controlled oscillator and down converter for RF applications. It features wide band
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MC13142
MC13142
lm 4572 SMD 8 PIN
2904 SMD IC
SMD TRANSISTOR H2A NPN
smd transistor h2a
SMD H2A
motorola smd transistor code 935
smd code H2A
0011 TRANSISTOR
transistor smd H2A
h2a smd
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motorola dip16
Abstract: LM3900N equivalent LM390
Text: MC3301, LM2900, LM3900 Quad Single Supply QUAD OPERATIONAL AMPLIFIERS Operational Amplifiers These internally compensated Norton operational amplifiers are designed specifically for single positive power supply applications found in industrial control systems and automotive electronics. Each device contains four
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MC3301,
LM2900,
LM3900
motorola dip16
LM3900N equivalent
LM390
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mc3363 application note
Abstract: CFW455 SFE10.7MS2-A j350 TRANSISTOR H1 SOT-89 transistor rf MC3357 application note MC3363DW
Text: MC3363 Low Power Dual Conversion FM Receiver The MC3363 is a single chip narrowband VHF FM radio receiver. It is a dual conversion receiver with RF amplifier transistor, oscillators, mixers, quadrature detector, meter drive/carrier detect and mute circuitry. The
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MC3363
MC3363
mc3363 application note
CFW455
SFE10.7MS2-A
j350 TRANSISTOR
H1 SOT-89 transistor rf
MC3357 application note
MC3363DW
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ic LM 356
Abstract: No abstract text available
Text: MC33171 MC33172 MC33174 Low Power, Single Supply Operational Amplifiers DUAL Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 µA per amplifier and offer 1.8 MHz of gain bandwidth
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MC33171
MC33172
MC33171/72/74
ic LM 356
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2616P-A100
Abstract: 685 35K 2616PA100 MC33129D 2616P EE 35 bobbin
Text: MC34129 MC33129 High Performance Current Mode Controllers The MC34129/MC33129 are high performance current mode switching regulators specifically designed for use in low power digital telephone applications. These integrated circuits feature a unique internal fault timer
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MC34129/MC33129
2616P-A100
685 35K
2616PA100
MC33129D
2616P
EE 35 bobbin
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marking g1
Abstract: marking HA 7 sot23 transistor bfs20 BFS20
Text: rZ 7 SGS-THOMSON WiCTOOieS BFS20 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS20 G1 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . COMMON EMITTER IF AMPLIFIER SOT-23 ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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BFS20
OT-23
OT-23
marking g1
marking HA 7 sot23
transistor bfs20
BFS20
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PDF
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Untitled
Abstract: No abstract text available
Text: SyrnSEM i SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT5551LT1 TRANSISTOR NPN FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current ICM: 0.6 A Collector base voltage V ( b r ) cbo : 180 V Operating and storage junction temperature range
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OCR Scan
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MMBT5551LT1
MMBT5551LTl
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