18P06P
Abstract: Q67040-S4189
Text: SPD 18P06P SPU 18P06P Preliminary Data SIPMOS Small-Signal-T ransistor Features • P Product Summary Channel • Enhancement mode • Avalanche rated ^DS Drain-Source on-state resistance ^bs on 0.13 -18.6 b Continuous drain current V -60 Drain source voltage
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18P06P
SPD18P06P
P-T0252
Q67040-S4189
SPU18P06P
P-T0251
Q67040-S4192
G133L
18P06P
Q67040-S4189
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smd diode T42
Abstract: No abstract text available
Text: SPD 30N03L Infineon technologies SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode V ^DS Drain-Source on-state resistance WDS on 0.012 f i 30 A b Continuous drain current • Avalanche rated 30 Drain source voltage • Logic Level
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30N03L
P-T0252
Q67040-S4148-A2
Q67040-S4149-A2
SPU30N03L
SPD30N03L
S35bG5
SQT-89
B535bQ5
D13377Ã
smd diode T42
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23N05
Abstract: No abstract text available
Text: SPD 23N05 Infineon t« c h n o l o g ¡ o s i m p * o V e d R o ,°"’ SIPMOS PowerTransistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current
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23N05
SPD23N05
P-T0252
Q67040-S4152
SPU23N05
P-T0251
Q67040-S4132-A2
S35bQ5
Q133777
SQT-89
23N05
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