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    onsemi HGTG20N60B3D

    IGBT 600V 40A TO-247-3
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    DigiKey HGTG20N60B3D Tube 450
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    Avnet, Inc. HGTG20N60B3D

    Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Rail
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    RS HGTG20N60B3D Bulk 1
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    Fairchild Semiconductor Corporation HGTG20N60B3D

    Electronic Component
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    ComSIT USA HGTG20N60B3D 165
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    Others HGTG20N60B3D

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    Harris Semiconductor HGTG20N60B3D

    Transistors
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    Vyrian HGTG20N60B3D 286
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    G20N60B3D Datasheets (1)

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    G20N60B3D
    		Fairchild Semiconductor 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF 180.56KB 7

    G20N60B3D Datasheets Context Search

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    G20N60B3D

    Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n
    Contextual Info: G20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input


    OCR Scan     		HGTG20N60B3D HGTG20N60B3D RHRP3060. TA49016. G20N60B3D TA49016 G20N60B3 transistor C110 C110 LD26 RHRP3060 hgtg20n PDF

    G20N60B3D

    Abstract: G20N60B hg*20n60 Hgtg20n60
    Contextual Info: G20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D G20N60B3D G20N60B hg*20n60 Hgtg20n60 PDF

    G20N60B3D

    Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
    Contextual Info: S E M I C O N D U C T O R G20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated


    Original     		HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. RHRP3060 1-800-4-HARRIS G20N60B3D BVces LD26 igbt 600V 45UH PDF

    IGBTs

    Abstract: G20N60B3D g20n60 G20N60B HGTG20N60B3D LD26 RHRP3060
    Contextual Info: G20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. 140ns 150oC IGBTs G20N60B3D g20n60 G20N60B LD26 RHRP3060 PDF

    g20n60b3d

    Abstract: HGTG20N60B3D MOSFET 40A 600V LD26 RHRP3060
    Contextual Info: S E M I C O N D U C T O R G20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 40A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . . . . . . . . . . 140ns at 150oC


    Original     		HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. g20n60b3d MOSFET 40A 600V LD26 RHRP3060 PDF

    G20N60B3D

    Contextual Info: G20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. 140ns 150oC G20N60B3D PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    g20n60b3d

    Abstract: G20N60 HGTG20N60B3D LD26 RHRP3060 TA49016
    Contextual Info: G20N60B3D Data Sheet January 2000 File Number 3739.6 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. 140ns 150oC g20n60b3d G20N60 LD26 RHRP3060 TA49016 PDF

    G20N60B3D

    Abstract: HGTG20N60B3D LD26 RHRP3060 G20N60B3
    Contextual Info: G20N60B3D Semiconductor 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D LD26 RHRP3060 G20N60B3 PDF

    G20N60B3D

    Abstract: G20N60 HGTG20N60B3D LD26 RHRP3060
    Contextual Info: G20N60B3D Data Sheet January 2000 File Number 3739.6 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. 140ns 150oC G20N60B3D G20N60 LD26 RHRP3060 PDF