G2225 Search Results

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Part	ECAD Model	Manufacturer	Description	Download	Buy
59112-G22-25-037LF		Amphenol Communications Solutions	Minitek® 2.00mm, Board To Board, Unshrouded Vertical Stacking Header, Through Hole, Double Row, 50 Positions.

G2225 Price and Stock

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Quantic UTC CG2225X7R125K MLCC, 50V, X7R, 1200000 PF, 10%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CG2225X7R125K	Bulk			10	1 - 10 $6.92 100 $6.92 1000 $6.92 10000 $6.92	Buy Now
Surge Components Inc LSG101M2G---2225S CAP ALUM 400V POLAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LSG101M2G---2225S	Box			1,080	1 - 10 - 100 - 1000 - 10000 $1.22111	Buy Now
SiTime Corporation SIT3373AI-1B2-28NG222.527472 MEMS OSC VCXO 222.527472MHZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT3373AI-1B2-28NG222.527472				1	1 $13.29 10 $12.432 100 $11.5745 1000 $11.40304 10000 $11.40304	Buy Now
SiTime Corporation SIT3373AC-1B2-25NG222.527472 MEMS OSC VCXO 222.527472MHZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT3373AC-1B2-25NG222.527472				1	1 $13 10 $12.165 100 $11.3256 1000 $11.15786 10000 $11.15786	Buy Now
SiTime Corporation SIT3373AC-1B3-28NG222.527472 MEMS OSC VCXO 222.527472MHZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT3373AC-1B3-28NG222.527472				1	1 $9.9 10 $9.281 100 $8.6621 1000 $7.734 10000 $7.734	Buy Now

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G2225 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G2225X7R225KT3AB Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial	Original	MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3	PDF
NIPPON CAPACITORS Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,	Original	MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5	PDF
Z25 transistor Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1 Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25L MRFE6VS25LR5	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1008H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1008HR5 MMRF1008HSR5 N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for applications operating at frequencies	Original	MMRF1008H MMRF1008HR5 MMRF1008HSR5 MMRF1008HR5	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies	Original	MMRF1009H MMRF1009HR5 MMRF1009HSR5 MMRF1009HR5	PDF
UT-90-25 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1305H Rev. 0, 12/2013 RF Power LDMOS Transistors MMRF1305HR5 MMRF1305HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or	Original	MMRF1305H MMRF1305HR5 MMRF1305HSR5 MMRF1305HR5 UT-90-25	PDF
D260-4118-0000 Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac	PDF
ATC100B151J Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.	Original	MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT	PDF
G2225X7R225KT3AB Abstract: MRF6V12250HSR3 AN1955 MRF6V12250HR3 J162 250GX-0300-55-22 Text: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 2, 4/2010 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies	Original	MRF6V12250H MRF6V12250HR3 MRF6V12250HSR3 MRF6V12250HR3 G2225X7R225KT3AB MRF6V12250HSR3 AN1955 J162 250GX-0300-55-22	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies	Original	MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500HR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 AFT05MP075NR1	PDF

G2225X7R225KT3AB Abstract: m27500 transfer impedance Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,	Original	MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 G2225X7R225KT3AB m27500 transfer impedance	PDF
MRF6VP2600H Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 100fficers, MRF6VP2600H ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k	PDF
ATC100B9R1CT500XT Abstract: 2225x7r225kt3ab MRF6VP41KH mrf6vp41kh pcb 1000 watts power amp circuit diagram 22 pf capacitor datasheet A01TKLC NIPPON CAPACITORS MRF6VP41KHR6 A114 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 4, 3/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6VP41KHR6 MRF6VP41KHSR6 Designed primarily for pulsed wideband applications with frequencies up to	Original	MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 MRF6VP41KHR6 ATC100B9R1CT500XT 2225x7r225kt3ab MRF6VP41KH mrf6vp41kh pcb 1000 watts power amp circuit diagram 22 pf capacitor datasheet A01TKLC NIPPON CAPACITORS A114	PDF
Untitled Abstract: No abstract text available Text: Document Number: MMRF1310H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, industrial including laser and plasma exciters , broadcast (analog and digital),	Original	MMRF1310H MMRF1310HR5 MMRF1310HSR5 MMRF1310HR5 7/2014Semiconductor,	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 1/2014 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies	Original	MMRF1009H MMRF1009HR5 MMRF1009HSR5 MMRF1009HR5	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 2, 4/2010 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies	Original	MRF6V12250H MRF6V12250HR3 MRF6V12250HSR3 MRF6V12250HR3	PDF
MRFE6VP6300 Abstract: MRFE6VP6300H mrfe6vp6300hr MRFE6VP6300H date MRFE6VP GA3095-ALC AN1955 1812SMS-R12JLC ATC100B820JT500XT 465M-01 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 0, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR	Original	MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3 MRFE6VP6300 MRFE6VP6300H mrfe6vp6300hr MRFE6VP6300H date MRFE6VP GA3095-ALC AN1955 1812SMS-R12JLC ATC100B820JT500XT 465M-01	PDF
MRF6VP2600KH Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H 20ficers, MRF6VP2600HR6 MRF6VP2600KH TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw	PDF
G1822 Abstract: G18185JN G1828 Text: Panasonic Plastic Film Capacitors = E quipped w ith a S afety M echanism = M etallized P olyester/P olypropylene Film C apacitor Type: ECWG N o n -in d u c tiv e c o n s tru c tio n , F la m e -re ta rd a n t p la s tic case, Fast-on type/Lead w ire type • Features	OCR Scan		PDF

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G2225 Search Results

G2225 Result Highlights (1)

G2225 Price and Stock

Quantic UTC CG2225X7R125K

Surge Components Inc LSG101M2G---2225S

SiTime Corporation SIT3373AI-1B2-28NG222.527472

SiTime Corporation SIT3373AC-1B2-25NG222.527472

SiTime Corporation SIT3373AC-1B3-28NG222.527472

G2225 Datasheets Context Search

G2225X7R225KT3AB

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NIPPON CAPACITORS

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Z25 transistor

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UT-90-25

D260-4118-0000

ATC100B151J

G2225X7R225KT3AB

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G2225X7R225KT3AB

MRF6VP2600H

ATC100B9R1CT500XT

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MRFE6VP6300

MRF6VP2600KH

G1822